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參數(shù)資料
| 型號： | MTD6P10E |
| 廠商： | MOTOROLA INC |
| 元件分類： | JFETs |
| 英文描述： | TMOS POWER FET 6.0 AMPERES 100 VOLTS RDS(on) = 0.66 OHM |
| 中文描述： | 6 A, 100 V, 0.66 ohm, P-CHANNEL, Si, POWER, MOSFET |
| 文件頁數(shù)： | 3/10頁 |
| 文件大?。?/td> | 261K |
| 代理商： | MTD6P10E |
3
Motorola TMOS Power MOSFET Transistor Device Data
TYPICAL ELECTRICAL CHARACTERISTICS
R
R
(
VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS)
Figure 1. On–Region Characteristics
ID
ID
VGS, GATE–TO–SOURCE VOLTAGE (VOLTS)
Figure 2. Transfer Characteristics
R
ID, DRAIN CURRENT (AMPS)
Figure 3. On–Resistance versus Drain Current
and Temperature
ID, DRAIN CURRENT (AMPS)
Figure 4. On–Resistance versus Drain Current
and Gate Voltage
TJ, JUNCTION TEMPERATURE (
°
C)
Figure 5. On–Resistance Variation with
Temperature
VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS)
Figure 6. Drain–To–Source Leakage
Current versus Voltage
I
TJ = 25
°
C
VDS
≥
10 V
TJ = –55
°
C
25
°
C
TJ = 100
°
C
VGS = 0 V
VGS = 10 V
VGS = 10 V
ID = 3 A
9 V
8 V
7 V
6 V
5 V
100
°
C
VGS = 10 V
25
°
C
–55
°
C
TJ = 25
°
C
VGS = 10 V
15 V
TJ = 125
°
C
12
10
8
6
4
2
0
12
10
8
6
4
2
0
1.3
1.2
1.1
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
1.0
0.9
0.8
0.7
0.6
0.5
0.4
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
100
10
– 120
20
0
2
4
6
8
10
12
14
16
18
2
3
4
5
6
7
8
9
10
0
2
4
6
8
10
12
0
2
4
6
8
10
12
– 50
– 25
0
25
50
75
100
125
150
– 100
– 80
– 60
– 40
– 20
0
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