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參數(shù)資料
| 型號： | MTD6N20E |
| 廠商： | MOTOROLA INC |
| 元件分類： | JFETs |
| 英文描述： | TMOS POWER FET 6.0 AMPERES 200 VOLTS RDS(on) = 0.7 OHM |
| 中文描述： | 6 A, 200 V, 0.7 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 文件頁數(shù)： | 5/10頁 |
| 文件大小： | 269K |
| 代理商： | MTD6N20E |
5
Motorola TMOS Power MOSFET Transistor Device Data
V
V
DRAIN–TO–SOURCE DIODE CHARACTERISTICS
VSD, SOURCE–TO–DRAIN VOLTAGE (VOLTS)
Figure 8. Gate–To–Source and Drain–To–Source
Voltage versus Total Charge
I
Figure 9. Resistive Switching Time
Variation versus Gate Resistance
RG, GATE RESISTANCE (OHMS)
t
VDD = 100 V
ID = 6 A
VGS = 10 V
TJ = 25
°
C
td(off)
td(on)
VGS = 0 V
TJ = 25
°
C
Figure 10. Diode Forward Voltage versus Current
QT, TOTAL CHARGE (nC)
tf
12
10
8
6
4
2
0
14
12
10
8
6
4
2
0
1000
100
10
1
100
10
1
90
75
60
45
30
15
0
6
5
4
3
2
1
0
0.5
0.6
0.7
0.8
0.9
1.0
ID = 6 A
TJ = 25
°
C
QT
VDS
VGS
Q1
Q2
Q3
tr
SAFE OPERATING AREA
The Forward Biased Safe Operating Area curves define the
maximum simultaneous drain–to–source voltage and drain
current that a transistor can handle safely when it is forward
biased. Curves are based upon maximum peak junction
temperature and a case temperature (TC) of 25
°
C. Peak
repetitive pulsed power limits are determined by using the
thermal response data in conjunction with the procedures
discussed in AN569, “Transient Thermal Resistance–General
Data and Its Use.”
Switching between the off–state and the on–state may
traverse any load line provided neither rated peak current
(IDM) nor rated voltage (VDSS) is exceeded and the transition
time (tr,tf) do not exceed 10
μ
s. In addition the total power av-
eraged over a complete switching cycle must not exceed
(TJ(MAX) – TC)/(R
θ
JC).
A Power MOSFET designated E–FET can be safely used
in switching circuits with unclamped inductive loads. For
reliable operation, the stored energy from circuit inductance
dissipated in the transistor while in avalanche must be less
than the rated limit and adjusted for operating conditions
differing from those specified. Although industry practice is to
rate in terms of energy, avalanche energy capability is not a
constant. The energy rating decreases non–linearly with an
increase of peak current in avalanche and peak junction
temperature.
Although many E–FETs can withstand the stress of
drain–to–source avalanche at currents up to rated pulsed
current (IDM), the energy rating is specified at rated
continuous current (ID), in accordance with industry custom.
The energy rating must be derated for temperature as shown
in the accompanying graph (Figure 12). Maximum energy at
currents below rated continuous ID can safely be assumed to
equal the values indicated.
相關(guān)PDF資料 |
PDF描述 |
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| MTD6P10E | TMOS POWER FET 6.0 AMPERES 100 VOLTS RDS(on) = 0.66 OHM |
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| MTM60N06 | N-CHANNEL ENHANCEMENT-MODE SILICON GATE TMOS POWER FIELD EFFECT TRANSISTOR |
| MTP1302 | TMOS POWER FET 42 AMPERES 30 VOLTS RDS(on) = 22 mohm |
| MTP1306 | TMOS POWER FET 75 AMPERES 30 VOLTS RDS(on) = 0.0065 OHM |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MTD6N20E1 | 制造商:Rochester Electronics LLC 功能描述:- Bulk 制造商:ON Semiconductor 功能描述: |
| MTD6N20ET4 | 功能描述:MOSFET 200V 6A N-Channel RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| MTD6N20ET4G | 功能描述:MOSFET NFET DPAK 200V 6A 700mOhm RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| MTD6N20ET5G | 功能描述:MOSFET NFET DPAK 200V 6A 700MO RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| MTD6P10E | 功能描述:MOSFET P-CH 100V 6A DPAK RoHS:否 類別:分離式半導(dǎo)體產(chǎn)品 >> FET - 單 系列:- 標準包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金屬氧化物 FET 特點:邏輯電平門 漏極至源極電壓(Vdss):200V 電流 - 連續(xù)漏極(Id) @ 25° C:18A 開態(tài)Rds（最大）@ Id, Vgs @ 25° C:180 毫歐 @ 9A，10V Id 時的 Vgs(th)（最大）:4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應(yīng)商設(shè)備封裝:TO-220FP 包裝:管件 |
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