- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄369933 > MTD6N20E (MOTOROLA INC) TMOS POWER FET 6.0 AMPERES 200 VOLTS RDS(on) = 0.7 OHM PDF資料下載
參數(shù)資料
| 型號(hào)： | MTD6N20E |
| 廠商： | MOTOROLA INC |
| 元件分類： | JFETs |
| 英文描述： | TMOS POWER FET 6.0 AMPERES 200 VOLTS RDS(on) = 0.7 OHM |
| 中文描述： | 6 A, 200 V, 0.7 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 文件頁(yè)數(shù)： | 1/10頁(yè) |
| 文件大?。?/td> | 269K |
| 代理商： | MTD6N20E |
1
Motorola, Inc. 1995
!
N–Channel Enhancement–Mode Silicon Gate
This advanced TMOS E–FET is designed to withstand high
energy in the avalanche and commutation modes. The new energy
efficient design also offers a drain–to–source diode with a fast
recovery time. Designed for low voltage, high speed switching
applications in power supplies, converters and PWM motor
controls, these devices are particularly well suited for bridge circuits
where diode speed and commutating safe operating areas are
critical and offer additional safety margin against unexpected
voltage transients.
Avalanche Energy Specified
Source–to–Drain Diode Recovery Time Comparable to a
Discrete Fast Recovery Diode
Diode is Characterized for Use in Bridge Circuits
IDSS and VDS(on) Specified at Elevated Temperature
Surface Mount Package Available in 16 mm, 13–inch/2500
Unit Tape & Reel, Add –T4 Suffix to Part Number
MAXIMUM RATINGS
(TC = 25
°
C unless otherwise noted)
Rating
Symbol
Value
Unit
Drain–to–Source Voltage
VDSS
VDGR
VGS
VGSM
200
Vdc
Drain–to–Gate Voltage (RGS = 1.0 M
)
Gate–to–Source Voltage — Continuous
200
Vdc
— Non–repetitive (tp
≤
10 ms)
±
20
±
40
Vdc
Vpk
Drain Current
— Continuous
— Continuous @ 100
°
C
— Single Pulse (tp
≤
10
μ
s)
ID
ID
IDM
6.0
3.8
18
Adc
Apk
Total Power Dissipation
Derate above 25
°
C
Total Power Dissipation @ TA = 25
°
C, when mounted to minimum recommended pad size
PD
50
0.4
1.75
Watts
W/
°
C
Watts
Operating and Storage Temperature Range
TJ, Tstg
EAS
–55 to 150
°
C
Single Pulse Drain–to–Source Avalanche Energy — Starting TJ = 25
°
C
(VDD = 80 Vdc, VGS = 10 Vdc, IL = 6.0 Apk, L = 3.0 mH, RG = 25
)
54
mJ
Thermal Resistance — Junction to Case
— Junction to Ambient
— Junction to Ambient, when mounted to minimum recommended pad size
R
θ
JC
R
θ
JA
R
θ
JA
TL
2.50
100
71.4
°
C/W
Maximum Temperature for Soldering Purposes, 1/8
″
from case for 10 seconds
260
°
C
Designer’s Data for “Worst Case” Conditions
— The Designer’s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit
curves — representing boundaries on device characteristics — are given to facilitate “worst case” design.
E–FET and Designer’s are trademarks of Motorola, Inc. TMOS is a registered trademark of Motorola, Inc.
Thermal Clad is a trademark of the Bergquist Company.
Preferred
devices are Motorola recommended choices for future use and best overall value.
Order this document
by MTD6N20E/D
SEMICONDUCTOR TECHNICAL DATA
D
S
G
CASE 369A–13, Style 2
DPAK
TMOS POWER FET
6.0 AMPERES
200 VOLTS
RDS(on) = 0.7 OHM
Motorola Preferred Device
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| MTD6P10E | TMOS POWER FET 6.0 AMPERES 100 VOLTS RDS(on) = 0.66 OHM |
| MTM55N10 | N-CHANNEL ENHANCEMENT-MODE SILICON GATE TMOS POWER FIELD EFFECT TRANSISTOR |
| MTM60N06 | N-CHANNEL ENHANCEMENT-MODE SILICON GATE TMOS POWER FIELD EFFECT TRANSISTOR |
| MTP1302 | TMOS POWER FET 42 AMPERES 30 VOLTS RDS(on) = 22 mohm |
| MTP1306 | TMOS POWER FET 75 AMPERES 30 VOLTS RDS(on) = 0.0065 OHM |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MTD6N20E1 | 制造商:Rochester Electronics LLC 功能描述:- Bulk 制造商:ON Semiconductor 功能描述: |
| MTD6N20ET4 | 功能描述:MOSFET 200V 6A N-Channel RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| MTD6N20ET4G | 功能描述:MOSFET NFET DPAK 200V 6A 700mOhm RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| MTD6N20ET5G | 功能描述:MOSFET NFET DPAK 200V 6A 700MO RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| MTD6P10E | 功能描述:MOSFET P-CH 100V 6A DPAK RoHS:否 類別:分離式半導(dǎo)體產(chǎn)品 >> FET - 單 系列:- 標(biāo)準(zhǔn)包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金屬氧化物 FET 特點(diǎn):邏輯電平門 漏極至源極電壓(Vdss):200V 電流 - 連續(xù)漏極(Id) @ 25° C:18A 開(kāi)態(tài)Rds（最大）@ Id, Vgs @ 25° C:180 毫歐 @ 9A，10V Id 時(shí)的 Vgs(th)（最大）:4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應(yīng)商設(shè)備封裝:TO-220FP 包裝:管件 |
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。