參數(shù)資料
型號(hào)： MTD6N20E
廠商： MOTOROLA INC
元件分類： JFETs
英文描述： TMOS POWER FET 6.0 AMPERES 200 VOLTS RDS(on) = 0.7 OHM
中文描述： 6 A, 200 V, 0.7 ohm, N-CHANNEL, Si, POWER, MOSFET
文件頁數(shù)： 2/10頁
文件大小： 269K
代理商： MTD6N20E
2
Motorola TMOS Power MOSFET Transistor Device Data
ELECTRICAL CHARACTERISTICS
(TJ = 25
°
C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain–Source Breakdown Voltage
(VGS = 0 Vdc, ID = 0.25
μ
Adc)
Temperature Coefficient (Positive)
V(BR)DSS
200
—
—
689
—
—
Vdc
mV/
°
C
Zero Gate Voltage Drain Current
(VDS = 200 Vdc, VGS = 0 Vdc)
(VDS = 200 Vdc, VGS = 0 Vdc, TJ = 125
°
C)
Gate–Body Leakage Current (VGS =
±
20 Vdc, VDS = 0)
IDSS
—
—
—
—
10
100
μ
Adc
IGSS
—
—
100
nAdc
ON CHARACTERISTICS (1)
Gate Threshold Voltage
(VDS = VGS, ID = 250
μ
Adc)
Temperature Coefficient (Negative)
VGS(th)
2.0
—
3.0
7.1
4.0
—
Vdc
mV/
°
C
Static Drain–Source On–Resistance (VGS = 10 Vdc, ID = 3.0 Adc)
Drain–Source On–Voltage (VGS = 10 Vdc)
(ID = 6.0 Adc)
(ID = 3.0 Adc, TJ = 125
°
C)
RDS(on)
VDS(on)
—
0.46
0.700
Ohm
—
—
2.9
—
5.0
4.4
Vdc
Forward Transconductance (VDS = 15 Vdc, ID = 3.0 Adc)
gFS
1.5
—
—
mhos
DYNAMIC CHARACTERISTICS
Input Capacitance
f = 1.0 MHz)
Ciss
Coss
Crss
—
342
480
pF
Output Capacitance
(VDS = 25 Vdc, VGS = 0 Vdc,
—
92
130
Reverse Transfer Capacitance
—
27
55
SWITCHING CHARACTERISTICS (2)
Turn–On Delay Time
RG = 9.1
)
td(on)
tr
td(off)
tf
—
8.8
17.6
ns
Rise Time
(VDD = 100 Vdc, ID = 6.0 Adc,
VGS = 10 Vdc,
—
29
58
Turn–Off Delay Time
—
22
44
Fall Time
—
20
40.8
Gate Charge
(See Figure 8)
VGS = 10 Vdc)
QT
Q1
Q2
Q3
—
13.7
21
nC
(VDS = 160 Vdc, ID = 6.0 Adc,
—
2.7
—
—
7.1
—
—
5.9
—
SOURCE–DRAIN DIODE CHARACTERISTICS
Forward On–Voltage (1)
(IS = 6.0 Adc, VGS = 0 Vdc)
(IS = 6.0 Adc, VGS = 0 Vdc, TJ = 125
°
C)
VSD
—
—
0.99
0.9
1.2
—
Vdc
Reverse Recovery Time
(See Figure 14)
dIS/dt = 100 A/
μ
s)
trr
ta
—
138
—
ns
(IS = 6.0 Adc, VGS = 0 Vdc,
—
93
—
tb
—
45
—
Reverse Recovery Stored Charge
QRR
—
0.74
—
μ
C
INTERNAL PACKAGE INDUCTANCE
Internal Drain Inductance
(Measured from the drain lead 0.25
″
from package to center of die)
LD
—
4.5
—
nH
Internal Source Inductance
(Measured from the source lead 0.25
″
from package to source bond pad)
LS
—
7.5
—
nH
(1) Pulse Test: Pulse Width
≤
300
μ
s, Duty Cycle
≤
2%.
(2) Switching characteristics are independent of operating junction temperature.
相關(guān)PDF資料
PDF描述
MTD6P10E TMOS POWER FET 6.0 AMPERES 100 VOLTS RDS(on) = 0.66 OHM
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