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參數(shù)資料
| 型號： | MTD6N20E-T4 |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | JFETs |
| 英文描述： | 6 A, 200 V, 0.7 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | DPAK-3 |
| 文件頁數(shù)： | 2/9頁 |
| 文件大小： | 84K |
| 代理商： | MTD6N20E-T4 |
MTD6N20E
http://onsemi.com
2
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
DrainSource Breakdown Voltage
(VGS = 0 Vdc, ID = 0.25 mAdc)
Temperature Coefficient (Positive)
V(BR)DSS
200
689
Vdc
mV/
°C
Zero Gate Voltage Drain Current
(VDS = 200 Vdc, VGS = 0 Vdc)
(VDS = 200 Vdc, VGS = 0 Vdc, TJ = 125°C)
IDSS
10
100
mAdc
GateBody Leakage Current (VGS = ± 20 Vdc, VDS = 0)
IGSS
100
nAdc
ON CHARACTERISTICS (Note 3)
Gate Threshold Voltage
(VDS = VGS, ID = 250 mAdc)
Temperature Coefficient (Negative)
VGS(th)
2.0
3.0
7.1
4.0
Vdc
mV/
°C
Static DrainSource OnResistance (VGS = 10 Vdc, ID = 3.0 Adc)
RDS(on)
0.46
0.700
Ohm
DrainSource OnVoltage (VGS = 10 Vdc)
(ID = 6.0 Adc)
(ID = 3.0 Adc, TJ = 125°C)
VDS(on)
2.9
5.0
4.4
Vdc
Forward Transconductance (VDS = 15 Vdc, ID = 3.0 Adc)
gFS
1.5
mhos
DYNAMIC CHARACTERISTICS
Input Capacitance
(VDS = 25 Vdc, VGS = 0 Vdc,
f = 1.0 MHz)
Ciss
342
480
pF
Output Capacitance
Coss
92
130
Reverse Transfer Capacitance
Crss
27
55
SWITCHING CHARACTERISTICS (Note 4)
TurnOn Delay Time
(VDD = 100 Vdc, ID = 6.0 Adc,
VGS = 10 Vdc,
RG = 9.1 W)
td(on)
8.8
17.6
ns
Rise Time
tr
29
58
TurnOff Delay Time
td(off)
22
44
Fall Time
tf
20
40.8
Gate Charge
(See Figure 8)
(VDS = 160 Vdc, ID = 6.0 Adc,
VGS = 10 Vdc)
QT
13.7
21
nC
Q1
2.7
Q2
7.1
Q3
5.9
SOURCEDRAIN DIODE CHARACTERISTICS
Forward OnVoltage (Note 3)
(IS = 6.0 Adc, VGS = 0 Vdc)
(IS = 6.0 Adc, VGS = 0 Vdc,
TJ = 125°C)
VSD
0.99
0.9
1.2
Vdc
Reverse Recovery Time
(See Figure 14)
(IS = 6.0 Adc, VGS = 0 Vdc,
dIS/dt = 100 A/ms)
trr
138
ns
ta
93
tb
45
Reverse Recovery Stored Charge
QRR
0.74
mC
INTERNAL PACKAGE INDUCTANCE
Internal Drain Inductance
(Measured from the drain lead 0.25
″ from package to center of die)
LD
4.5
nH
Internal Source Inductance
(Measured from the source lead 0.25
″ from package to source bond pad)
LS
7.5
nH
3. Pulse Test: Pulse Width
≤ 300 ms, Duty Cycle ≤ 2%.
4. Switching characteristics are independent of operating junction temperature.
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相關代理商/技術參數(shù) |
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