參數(shù)資料
型號(hào)： MTD6N15
廠商： ON SEMICONDUCTOR
元件分類： 功率晶體管
英文描述： Power Field Effect Transistor DPAK for Surface Mount(功率場效應(yīng)晶體管)
中文描述： 6 A, 150 V, 0.3 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252
封裝： CASE 369C-01, DPAK-3
文件頁數(shù)： 2/6頁
文件大?。?/td> 70K
代理商： MTD6N15
MTD6N15
http://onsemi.com
2
ELECTRICAL CHARACTERISTICS
(T
J
= 25
°
C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
DrainSource Breakdown Voltage (V
GS
= 0 Vdc, I
D
= 0.25 mAdc)
Zero Gate Voltage Drain Current
(V
DS
= Rated V
DSS
, V
GS
= 0 Vdc)
T
J
°
C
V
(BR)DSS
I
DSS
150
Vdc
10
100
Adc
GateBody Leakage Current, Forward (V
GSF
= 20 Vdc, V
DS
= 0)
I
GSSF
100
nAdc
GateBody Leakage Current, Reverse (V
GSR
= 20 Vdc, V
DS
= 0)
ON CHARACTERISTICS
(Note 3)
I
GSSR
100
nAdc
Gate Threshold Voltage (V
DS
= V
GS
, I
D
= 1.0 mAdc)
T
J
= 100
°
C
V
GS(th)
2.0
1.5
4.5
4.0
Vdc
Static DrainSource OnResistance (V
GS
= 10 Vdc, I
D
= 3.0 Adc)
R
DS(on)
0.3
DrainSource OnVoltage (V
GS
= 10 Vdc)
(I
D
= 6.0 Adc)
(I
D
= 3.0 Adc, T
J
= 100
°
C)
V
DS(on)
1.8
1.5
Vdc
Forward Transconductance (V
DS
= 15 Vdc, I
D
= 3.0 Adc)
DYNAMIC CHARACTERISTICS
g
FS
2.5
mhos
Input Capacitance
(V
DS
= 25 Vdc, V
= 0 Vdc, f = 1.0 MHz)
(See Figure 11)
C
iss
C
oss
C
rss
1200
pF
Output Capacitance
500
Reverse Transfer Capacitance
SWITCHING CHARACTERISTICS*
(T
J
= 100
°
C)
120
TurnOn Delay Time
(V
DD
= 25 Vdc, I
D
= 3.0 Adc, R
G
= 50 )
(See Figures 13 and 14)
t
d(on)
t
r
t
d(off)
t
f
Q
g
Q
gs
Q
gd
50
ns
Rise Time
180
TurnOff Delay Time
200
Fall Time
100
Total Gate Charge
(V
DS
= 0.8 Rated V
DSS
,
I
D
= Rated I
, V
= 10 Vdc)
(See Figure 12)
15 (Typ)
30
nC
GateSource Charge
8.0 (Typ)
GateDrain Charge
SOURCEDRAIN DIODE CHARACTERISTICS*
7.0 (Typ)
Forward OnVoltage
(I
S
= 6.0 Adc, di/dt = 25 A/ s, V
GS
= 0 Vdc)
V
SD
t
on
t
rr
1.3 (Typ)
2.0
Vdc
Forward TurnOn Time
Limited by stray inductance
Reverse Recovery Time
3. Pulse Test: Pulse Width
≤
300 s, Duty Cycle
≤
2%.
325 (Typ)
ns
T, TEMPERATURE (
°
C)
Figure 1. Power Derating
P
25
20
15
10
5
0
150
125
100
75
50
25
2.5
2
1.5
1
0.5
0
T
A
T
C
T
C
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
MTD6N15-1 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:Power Field Effect Transistor DPAK for Surface Mount
MTD6N15T4 功能描述:MOSFET 150V 6A N-Channel RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
MTD6N15T4G 功能描述:MOSFET NFET DPAK 150V 6A 300mOhm RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
MTD6N15T4GV 功能描述:MOSFET Single N-Ch 150V 6A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
MTD6N20 制造商:ON Semiconductor 功能描述:MOSFET N D-PAK
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