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參數(shù)資料
| 型號： | MTD6N151 |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | JFETs |
| 英文描述： | 6 A, 150 V, 0.3 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | CASE 369D-01, DPAK-3 |
| 文件頁數(shù)： | 4/7頁 |
| 文件大?。?/td> | 141K |
| 代理商： | MTD6N151 |
MTD6N15
http://onsemi.com
4
SAFE OPERATING AREA
VDS, DRAINTOSOURCE VOLTAGE (VOLTS)
Figure 8. Maximum Rated Forward Biased
Safe Operating Area
VDS, DRAINTOSOURCE VOLTAGE (VOLTS)
Figure 9. Maximum Rated Switching
Safe Operating Area
I D
,DRAIN
CURRENT
(AMPS)
RDS(on) LIMIT
THERMAL LIMIT
PACKAGE LIMIT
I D
,DRAIN
CURRENT
(AMPS)
TJ ≤ 150°C
20
10
5
2
1
0.5
0.2
0.1
0.05
0.03
300
200
100
70
50
30
20
10
7
5
3
2
1
0.3 0.5 0.7
10
μs
1 ms
10 ms
dc
100
μs
TC = 25°C
VGS = 20 V SINGLE PULSE
20
15
10
5
0
20
40
60
80
100
120
140
160
FORWARD BIASED SAFE OPERATING AREA
The FBSOA curves define the maximum draintosource
voltage and drain current that a device can safely handle
when it is forward biased, or when it is on, or being turned
on. Because these curves include the limitations of
simultaneous high voltage and high current, up to the rating
of the device, they are especially useful to designers of linear
systems. The curves are based on a case temperature of 25°C
and a maximum junction temperature of 150°C. Limitations
for repetitive pulses at various case temperatures can be
determined by using the thermal response curves. Motorola
Application
Note,
AN569,
“Transient
Thermal
ResistanceGeneral Data and Its Use” provides detailed
instructions.
SWITCHING SAFE OPERATING AREA
The switching safe operating area (SOA) of Figure 9 is the
boundary that the load line may traverse without incurring
damage to the MOSFET. The fundamental limits are the
peak current, IDM and the breakdown voltage, V(BR)DSS.
The switching SOA shown in Figure 8 is applicable for both
turnon and turnoff of the devices for switching times less
than one microsecond.
The power averaged over a complete switching cycle
must be less than:
TJ(max) TC
RθJC
t, TIME OR PULSE WIDTH (ms)
Figure 10. Thermal Response
r(t)
,EFFECTIVE
TRANSIENT
THERMAL
RESIST
ANCE
(NORMALIZED)
RθJC(t) = r(t) RθJC
RθJC(t) = 6.25°C/W MAX
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t1
TJ(pk) TC = P(pk) RθJC(t)
P(pk)
t1
t2
DUTY CYCLE, D = t1/t2
1000
0.01
0.02 0.03
0.05
0.1
0.2 0.3
0.5
1
2
3
5
10
20
50
100
200
500
0.01
0.02
0.03
0.05
0.07
0.1
0.2
0.3
0.5
0.7
D = 0.5
0.2
0.1
0.05
0.02
0.01
SINGLE PULSE
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PDF描述 |
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| MTD6N15T4 | 6 A, 150 V, 0.3 ohm, N-CHANNEL, Si, POWER, MOSFET |
| MTD6N20E1 | 6 A, 200 V, 0.7 ohm, N-CHANNEL, Si, POWER, MOSFET |
| MTD6N20E-T4 | 6 A, 200 V, 0.7 ohm, N-CHANNEL, Si, POWER, MOSFET |
| MTD6N20ET4 | 6 A, 200 V, 0.7 ohm, N-CHANNEL, Si, POWER, MOSFET |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MTD6N15-1 | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:Power Field Effect Transistor DPAK for Surface Mount |
| MTD6N15T4 | 功能描述:MOSFET 150V 6A N-Channel RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| MTD6N15T4G | 功能描述:MOSFET NFET DPAK 150V 6A 300mOhm RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| MTD6N15T4GV | 功能描述:MOSFET Single N-Ch 150V 6A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| MTD6N20 | 制造商:ON Semiconductor 功能描述:MOSFET N D-PAK |
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