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參數(shù)資料
| 型號(hào)： | MTD6N151 |
| 廠(chǎng)商： | ON SEMICONDUCTOR |
| 元件分類(lèi)： | JFETs |
| 英文描述： | 6 A, 150 V, 0.3 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | CASE 369D-01, DPAK-3 |
| 文件頁(yè)數(shù)： | 2/7頁(yè) |
| 文件大?。?/td> | 141K |
| 代理商： | MTD6N151 |
MTD6N15
http://onsemi.com
2
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
(VGS = 0 Vdc, ID = 0.25 mAdc)
V(BR)DSS
150
—
Vdc
Zero Gate Voltage Drain Current
(VDS = Rated VDSS, VGS = 0 Vdc)
TJ = 125°C
IDSS
—
10
100
μAdc
GateBody Leakage Current, Forward (VGSF = 20 Vdc, VDS = 0)
IGSSF
—
100
nAdc
GateBody Leakage Current, Reverse (VGSR = 20 Vdc, VDS = 0)
IGSSR
—
100
nAdc
ON CHARACTERISTICS (Note 3)
Gate Threshold Voltage (VDS = VGS, ID = 1.0 mAdc)
TJ = 100°C
VGS(th)
2.0
1.5
4.5
4.0
Vdc
Static DrainSource OnResistance (VGS = 10 Vdc, ID = 3.0 Adc)
RDS(on)
—
0.3
Ohm
DrainSource OnVoltage (VGS = 10 Vdc)
(ID = 6.0 Adc)
(ID = 3.0 Adc, TJ = 100°C)
VDS(on)
—
1.8
1.5
Vdc
Forward Transconductance (VDS = 15 Vdc, ID = 3.0 Adc)
gFS
2.5
—
mhos
DYNAMIC CHARACTERISTICS
Input Capacitance
(VDS = 25 Vdc, VGS = 0 Vdc,
f = 1.0 MHz)
See Figure 11
Ciss
—
1200
pF
Output Capacitance
Coss
—
500
Reverse Transfer Capacitance
Crss
—
120
SWITCHING CHARACTERISTICS* (TJ = 100°C)
TurnOn Delay Time
(VDD = 25 Vdc, ID = 3.0 Adc,
RG = 50 Ω)
See Figures 13 and 14
td(on)
—
50
ns
Rise Time
tr
—
180
TurnOff Delay Time
td(off)
—
200
Fall Time
tf
—
100
Total Gate Charge
(VDS = 0.8 Rated VDSS,
ID = Rated ID, VGS = 10 Vdc)
See Figure 12
Qg
15 (Typ)
30
nC
GateSource Charge
Qgs
8.0 (Typ)
—
GateDrain Charge
Qgd
7.0 (Typ)
—
SOURCEDRAIN DIODE CHARACTERISTICS*
Forward OnVoltage
(IS = 6.0 Adc, di/dt = 25 A/μs
VGS = 0 Vdc,)
VSD
1.3 (Typ)
2.0
Vdc
Forward TurnOn Time
ton
Limited by stray inductance
Reverse Recovery Time
trr
325 (Typ)
—
ns
3. Pulse Test: Pulse Width ≤ 300 μs, Duty Cycle ≤ 2%.
T, TEMPERATURE (
°C)
Figure 1. Power Derating
P
D
,POWER
DISSIP
A
TION
(W
A
TTS)
25
20
15
10
5
0
150
125
100
75
50
25
2.5
2
1.5
1
0.5
0
TA TC
TC
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相關(guān)代理商/技術(shù)參數(shù) |
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| MTD6N15-1 | 制造商:ONSEMI 制造商全稱(chēng):ON Semiconductor 功能描述:Power Field Effect Transistor DPAK for Surface Mount |
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| MTD6N15T4GV | 功能描述:MOSFET Single N-Ch 150V 6A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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