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參數(shù)資料
| 型號： | MTD20N06VT4 |
| 廠商： | MOTOROLA INC |
| 元件分類： | JFETs |
| 英文描述： | 20 A, 60 V, 0.085 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 文件頁數(shù)： | 6/10頁 |
| 文件大小： | 257K |
| 代理商： | MTD20N06VT4 |
MTD20N06V
5
Motorola TMOS Power MOSFET Transistor Device Data
V
DS
,DRAIN–T
O–SOURCE
VOL
TAGE
(VOL
TS)
V
GS
,GA
TE–T
O–SOURCE
VOL
TAGE
(VOL
TS)
DRAIN–TO–SOURCE DIODE CHARACTERISTICS
0.5 0.55 0.6 0.65 0.7 0.75
VSD, SOURCE–TO–DRAIN VOLTAGE (VOLTS)
Figure 8. Gate–To–Source and Drain–To–Source
Voltage versus Total Charge
I S
,SOURCE
CURRENT
(AMPS)
Figure 9. Resistive Switching Time
Variation versus Gate Resistance
RG, GATE RESISTANCE (OHMS)
1
10
100
t,
TIME
(ns)
TJ = 25°C
ID = 20 A
VDD = 30 V
VGS = 10 V
tr
tf
td(off)
td(on)
TJ = 25°C
VGS = 0 V
Figure 10. Diode Forward Voltage versus Current
0
Qg, TOTAL GATE CHARGE (nC)
5
10
15
20
30
TJ = 25°C
ID = 20 A
VDS
VGS
0
2
4
6
20
1000
100
10
1
9
7
5
0
10
8
6
4
30
15
12
9
6
3
0
3
2
1
25
18
21
24
27
Q2
Q3
QT
Q1
8
18
0.8 0.85 0.9 0.95
1
1.1
1.05
10
12
14
16
SAFE OPERATING AREA
The Forward Biased Safe Operating Area curves define
the maximum simultaneous drain–to–source voltage and
drain current that a transistor can handle safely when it is for-
ward biased. Curves are based upon maximum peak junc-
tion temperature and a case temperature (TC) of 25°C. Peak
repetitive pulsed power limits are determined by using the
thermal response data in conjunction with the procedures
discussed in AN569, “Transient Thermal Resistance–General
Data and Its Use.”
Switching between the off–state and the on–state may tra-
verse any load line provided neither rated peak current (IDM)
nor rated voltage (VDSS) is exceeded and the transition time
(tr,tf) do not exceed 10 s. In addition the total power aver-
aged over a complete switching cycle must not exceed
(TJ(MAX) – TC)/(R
θJC).
A Power MOSFET designated E–FET can be safely used
in switching circuits with unclamped inductive loads. For reli-
able operation, the stored energy from circuit inductance dis-
sipated in the transistor while in avalanche must be less than
the rated limit and adjusted for operating conditions differing
from those specified. Although industry practice is to rate in
terms of energy, avalanche energy capability is not a
constant. The energy rating decreases non–linearly with an
increase of peak current in avalanche and peak junction tem-
perature.
Although many E–FETs can withstand the stress of drain–
to–source avalanche at currents up to rated pulsed current
(IDM), the energy rating is specified at rated continuous cur-
rent (ID), in accordance with industry custom. The energy rat-
ing must be derated for temperature as shown in the
accompanying graph (Figure 12). Maximum energy at cur-
rents below rated continuous ID can safely be assumed to
equal the values indicated.
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| MTD20N06VT4 | 20 A, 60 V, 0.08 ohm, N-CHANNEL, Si, POWER, MOSFET |
| MTD20P03HDL1G | 19 A, 30 V, 0.099 ohm, P-CHANNEL, Si, POWER, MOSFET |
| MTD20P03HDL | 19 A, 30 V, 0.099 ohm, P-CHANNEL, Si, POWER, MOSFET |
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相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| MTD20P03 | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:TMOS POWER FET LOGIC LEVEL 19 AMPERES 30 VOLTS RDS(on) = 0.099 OHM |
| MTD20P03HDL | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:TMOS POWER FET LOGIC LEVEL 19 AMPERES 30 VOLTS RDS(on) = 0.099 OHM |
| MTD20P03HDL1 | 制造商:ON Semiconductor 功能描述:Trans MOSFET P-CH 30V 19A 3-Pin(3+Tab) IPAK Rail 制造商:Rochester Electronics LLC 功能描述:- Bulk |
| MTD20P03HDL1G | 制造商:ON Semiconductor 功能描述:Trans MOSFET P-CH 30V 19A 3-Pin(3+Tab) IPAK Rail |
| MTD20P03HDLT4 | 功能描述:MOSFET P-CH 30V 19A DPAK RoHS:否 類別:分離式半導體產(chǎn)品 >> FET - 單 系列:- 標準包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金屬氧化物 FET 特點:邏輯電平門 漏極至源極電壓(Vdss):200V 電流 - 連續(xù)漏極(Id) @ 25° C:18A 開態(tài)Rds（最大）@ Id, Vgs @ 25° C:180 毫歐 @ 9A，10V Id 時的 Vgs(th)（最大）:4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應商設備封裝:TO-220FP 包裝:管件 |
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