參數(shù)資料
型號(hào)： MTD20N06VT4
廠商： MOTOROLA INC
元件分類(lèi)： JFETs
英文描述： 20 A, 60 V, 0.085 ohm, N-CHANNEL, Si, POWER, MOSFET
文件頁(yè)數(shù)： 3/10頁(yè)
文件大小： 257K
代理商： MTD20N06VT4
MTD20N06V
2
Motorola TMOS Power MOSFET Transistor Device Data
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain–to–Source Breakdown Voltage
(Cpk
≥ 2.0) (3)
(VGS = 0 Vdc, ID = 0.25 mAdc)
Temperature Coefficient (Positive)
V(BR)DSS
60
—
69
—
Vdc
mV/
°C
Zero Gate Voltage Drain Current
(VDS = 60 Vdc, VGS = 0 Vdc)
(VDS = 60 Vdc, VGS = 0 Vdc, TJ = 150°C)
IDSS
—
10
100
Adc
Gate–Body Leakage Current (VGS = ± 20 Vdc, VDS = 0 Vdc)
IGSS
—
100
nAdc
ON CHARACTERISTICS (1)
Gate Threshold Voltage
(Cpk
≥ 2.0) (3)
(VDS = VGS, ID = 250 Adc)
Threshold Temperature Coefficient (Negative)
VGS(th)
2.0
—
2.8
5.0
4.0
—
Vdc
mV/
°C
Static Drain–to–Source On–Resistance
(Cpk
≥ 2.0) (3)
(VGS = 10 Vdc, ID = 10 Adc)
RDS(on)
—
0.065
0.080
Ohm
Drain–to–Source On–Voltage
(VGS = 10 Vdc, ID = 10 Adc)
(VGS = 10 Vdc, ID = 10 Adc, TJ = 150°C)
VDS(on)
—
2.0
1.9
Vdc
Forward Transconductance (VDS = 6.0 Vdc, ID = 10 Adc)
gFS
6.0
8.0
—
mhos
DYNAMIC CHARACTERISTICS
Input Capacitance
(VDS = 25 Vdc, VGS = 0 Vdc,
f = 1.0 MHz)
Ciss
—
590
830
pF
Output Capacitance
(VDS = 25 Vdc, VGS = 0 Vdc,
f = 1.0 MHz)
Coss
—
180
250
Reverse Transfer Capacitance
f = 1.0 MHz)
Crss
—
40
80
SWITCHING CHARACTERISTICS (2)
Turn–On Delay Time
(VDD = 30 Vdc, ID = 20 Adc,
VGS = 10 Vdc,
RG = 9.1 )
td(on)
—
8.7
20
ns
Rise Time
(VDD = 30 Vdc, ID = 20 Adc,
VGS = 10 Vdc,
RG = 9.1 )
tr
—
77
150
Turn–Off Delay Time
VGS = 10 Vdc,
RG = 9.1 )
td(off)
—
26
50
Fall Time
G = 9.1 )
tf
—
46
90
Gate Charge
(VDS = 48 Vdc, ID = 20 Adc,
VGS = 10 Vdc)
QT
—
28
40
nC
(VDS = 48 Vdc, ID = 20 Adc,
VGS = 10 Vdc)
Q1
—
4.0
—
(VDS = 48 Vdc, ID = 20 Adc,
VGS = 10 Vdc)
Q2
—
9.0
—
Q3
—
8.0
—
SOURCE–DRAIN DIODE CHARACTERISTICS
Forward On–Voltage (1)
(IS = 20 Adc, VGS = 0 Vdc)
(IS = 20 Adc, VGS = 0 Vdc, TJ = 150°C)
VSD
—
1.05
0.96
1.6
—
Vdc
Reverse Recovery Time
(IS = 20 Adc, VGS = 0 Vdc,
dIS/dt = 100 A/s)
trr
—
60
—
ns
(IS = 20 Adc, VGS = 0 Vdc,
dIS/dt = 100 A/s)
ta
—
52
—
(IS = 20 Adc, VGS = 0 Vdc,
dIS/dt = 100 A/s)
tb
—
8.0
—
Reverse Recovery Stored Charge
QRR
—
0.172
—
C
INTERNAL PACKAGE INDUCTANCE
Internal Drain Inductance
(Measured from contact screw on tab to center of die)
(Measured from the drain lead 0.25
″ from package to center of die)
LD
—
3.5
4.5
—
nH
Internal Source Inductance
(Measured from the source lead 0.25
″ from package to source bond pad)
LS
—
7.5
—
nH
(1) Pulse Test: Pulse Width
≤ 300 s, Duty Cycle ≤ 2%.
(2) Switching characteristics are independent of operating junction temperature.
(3) Reflects typical values.
Cpk =
Max limit – Typ
3 x SIGMA
相關(guān)PDF資料
PDF描述
MTD20N06VT4 20 A, 60 V, 0.08 ohm, N-CHANNEL, Si, POWER, MOSFET
MTD20P03HDL1G 19 A, 30 V, 0.099 ohm, P-CHANNEL, Si, POWER, MOSFET
MTD20P03HDL 19 A, 30 V, 0.099 ohm, P-CHANNEL, Si, POWER, MOSFET
MTD20P03HDL1 19 A, 30 V, 0.099 ohm, P-CHANNEL, Si, POWER, MOSFET
MTD20P03HDLT4 19 A, 30 V, 0.099 ohm, P-CHANNEL, Si, POWER, MOSFET
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
MTD20P03 制造商:MOTOROLA 制造商全稱(chēng):Motorola, Inc 功能描述:TMOS POWER FET LOGIC LEVEL 19 AMPERES 30 VOLTS RDS(on) = 0.099 OHM
MTD20P03HDL 制造商:MOTOROLA 制造商全稱(chēng):Motorola, Inc 功能描述:TMOS POWER FET LOGIC LEVEL 19 AMPERES 30 VOLTS RDS(on) = 0.099 OHM
MTD20P03HDL1 制造商:ON Semiconductor 功能描述:Trans MOSFET P-CH 30V 19A 3-Pin(3+Tab) IPAK Rail 制造商:Rochester Electronics LLC 功能描述:- Bulk
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