參數(shù)資料
型號(hào)： MTD1312T4
廠商： ON SEMICONDUCTOR
元件分類： JFETs
英文描述： 6 A, 30 V, 0.016 ohm, N-CHANNEL, Si, POWER, MOSFET
封裝： CASE 369A-13, DPAK-3
文件頁(yè)數(shù)： 7/12頁(yè)
文件大小： 115K
代理商： MTD1312T4
MTD1312
http://onsemi.com
4
TYPICAL ELECTRICAL CHARACTERISTICS
Figure 1. On–Region Characteristics
Figure 2. Transfer Characteristics
Figure 3. On–Resistance versus
Drain Current
Figure 4. On–Resistance versus Drain Current
and Gate Voltage
Figure 5. On–Resistance Variation with
Temperature
Figure 6. Drain–To–Source Leakage
Current versus Voltage
5.0
0
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
5.0
10
VGS, GATE-TO-SOURCE (VOLTS)
0
-25
-50
TJ, JUNCTION TEMPERATURE (°C)
2.0
1.5
1.0
0
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
020
1.0E-07
1.0E-08
1.0E-09
1.0E-10
0
I D
,DRAIN
CURRENT
(AMPS)
R
0
2.0
4.0
6.0
0
2.0
3.0
,DRAIN-T
O-SOURCE
RESIST
ANCE
(NORMALIZED)
R DS(on)
50
25
10
30
I DSS
,LEAKAGE
(AMPS)
40
2.5
0
VGS, GATE-TO-SOURCE VOLTAGE (VOLTS)
10
I D
,DRAIN
CURRENT
(AMPS)
0
0.5
2.0
4.0
40
,DRAIN-T
O-SOURCE
RESIST
ANCE
(OHMS)
DS(on)
40
0
ID, DRAIN CURRENT (AMPS)
0.020
0.010
0.005
0
R
10
20
30
,DRAIN-T
O-SOURCE
RESIST
ANCE
(OHMS)
DS(on)
TJ = 25°C
15
20
25
30
35
1.0
3.0
9.0
8.0
10
7.0
3.0
3.5
20
15
5.0
25
1.0
4.0
5.0
0.02
0.10
0.015
TJ = 25°C
VGS = 2.7 V
3.3 V
TJ = 125°C
25°C
-55°C
ID = 10 A
TJ = 25°C
10 V
VGS = 4.5 V
ID = 10 A
VGS = 10 V
VDS ≥ 10 V
TJ = 125°C
100°C
25°C
6.0 V
10 V
75
100
150
125
3.7 V
4.5 V
30
35
1.5
1.0
0.04
0.06
0.08
6.0
7.0
8.0
9.0
0.5
VGS = 0 V
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