參數(shù)資料
型號： MTD1312T4
廠商： ON SEMICONDUCTOR
元件分類： JFETs
英文描述： 6 A, 30 V, 0.016 ohm, N-CHANNEL, Si, POWER, MOSFET
封裝： CASE 369A-13, DPAK-3
文件頁數(shù)： 6/12頁
文件大?。?/td> 115K
代理商： MTD1312T4
MTD1312
http://onsemi.com
3
ELECTRICAL CHARACTERISTICS – (continued) (TC = 25°C unless otherwise noted)
Characteristics
Symbol
Min
Typ
Max
Unit
SWITCHING CHARACTERISTICS (Note 5.)
Turn–On Delay Time
td(on)
–
8.0
16
ns
Rise Time
(VDD = 24 Vdc, ID = 20 Adc,
VGS =10Vdc
tr
–
45
90
Turn–Off Delay Time
VGS = 10 Vdc,
RG = 6.0 ) (Note 4.)
td(off)
–
50
100
Fall Time
RG 6.0 ) (Note 4.)
tf
–
90
180
Gate Charge
QT
–
35
50
nC
(VDS = 15 Vdc, ID = 10 Adc,
Q1
–
3.5
–
(VDS 15 Vdc, ID 10 Adc,
VGS = 10 Vdc) (Note 4.)
Q2
–
10
–
Q3
–
SOURCE–DRAIN DIODE CHARACTERISTICS
Forward On–Voltage
(IS = 10 Adc, VGS = 0 Vdc) (Note 4.)
(IS = 10 Adc, VGS = 0 Vdc,
TJ = 125°C)
VSD
–
0.81
(0.61)
1.0
–
Vdc
Reverse Recovery Time
trr
–
40
–
ns
(IS = 20 Adc, VGS = 0 Vdc,
ta
–
20
–
(IS 20 Adc, VGS 0 Vdc,
dIS/dt = 100 A/s) (Note 4.)
tb
–
20
–
Reverse Recovery Stored Charge
QRR
–
0.04
–
C
4. Pulse Test: Pulse Width
≤ 300 s, Duty Cycle ≤ 2%.
5. Switching characteristics are independent of operating junction temperature.
6. Reflects typical values.
相關(guān)PDF資料
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