參數(shù)資料
型號(hào)： MTD1312T4
廠商： ON SEMICONDUCTOR
元件分類： JFETs
英文描述： 6 A, 30 V, 0.016 ohm, N-CHANNEL, Si, POWER, MOSFET
封裝： CASE 369A-13, DPAK-3
文件頁數(shù)： 5/12頁
文件大?。?/td> 115K
代理商： MTD1312T4
MTD1312
http://onsemi.com
2
POWER RATINGS (TC = 25°C unless otherwise specified)
Parameter
Symbol
Value
Unit
Drain Current – Continuous
Drain Current – Single Pulse (tp
≤ 10 ms)
Mounted on heat sink
TC = 25°C
ID
IDM
25
75
Adc
Apk
Continuous Source Current (Diode Conduction)
TC 25 C
VGS =10Vdc
IS
25
Adc
Total Power Dissipation @ TA = 25°C
VGS = 10 Vdc
PD
72
Watts
Thermal Resistance
– Junction–to–Case
Steady State
R
θJC
1.72
°C/W
Parameter
Symbol
Value
Unit
Drain Current – Continuous
Drain Current – Single Pulse (tp
≤ 10 ms)
Mounted on minimum
recommended
FR 4 or G 10 board
ID
IDM
6.0
18
Adc
Apk
Continuous Source Current (Diode Conduction)
FR–4 or G–10 board
IS
1.1
Adc
Total Power Dissipation @ TA = 25°C
VGS = 10 Vdc
PD
1.0
Watts
Thermal Resistance
– Junction–to–Ambient
Steady State
R
θJA
118
°C/W
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Characteristics
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain–to–Source Breakdown Voltage (Notes 1. & 3.)
(VGS = 0 Vdc, ID = 0.25 mAdc)
Temperature Coefficient (Positive)
V(BR)DSS
30
–
(30)
–
Vdc
mV/
°C
Zero Gate Voltage Drain Current
(VDS = 30 Vdc, VGS = 0 Vdc)
(VDS = 30 Vdc, VGS = 0 Vdc, TJ = 125°C)
IDSS
–
1.0
(10)
Adc
Gate–Body Leakage Current
(VGS = ± 20 Vdc, VDS = 0 Vdc)
IGSS
–
500
nAdc
ON CHARACTERISTICS (Note 1.)
Gate Threshold Voltage (Notes 1. & 3.)
(VDS = VGS, ID = 0.25 mAdc)
Threshold Temperature Coefficient (Negative)
VGS(th)
1.0
–
1.4
(4.3)
2.0
–
Vdc
mV/
°C
Static Drain–to–Source On–Resistance (Notes 1. & 3.)
(VGS = 10 Vdc, ID = 10 Adc)
(VGS = 4.5 Vdc, ID = 5.0 Adc)
RDS(on)
–
10
14
16
20
m
W
Forward Transconductance
(VDS = 5.0 Vdc, ID = 1.0 Adc) (Note 1.)
gFS
–
5.4
–
Mhos
DYNAMIC CHARACTERISTICS
Input Capacitance
(V
24 Vd
V
0 Vd
Ciss
–
1110
1540
pF
Output Capacitance
(VDS = 24 Vdc, VGS = 0 Vdc,
f = 1.0 MHz)
Coss
–
490
690
Transfer Capacitance
f = 1.0 MHz)
Crss
–
150
210
1. Pulse Test: Pulse Width
≤ 300 s, Duty Cycle ≤ 2%.
2. Switching characteristics are independent of operating junction temperature.
3. Reflects typical values.
相關(guān)PDF資料
PDF描述
MTD1N50ET4 1 A, 500 V, 5 ohm, N-CHANNEL, Si, POWER, MOSFET
MTD1N50EG 1 A, 500 V, 5 ohm, N-CHANNEL, Si, POWER, MOSFET
MTD1N50E1 1 A, 500 V, 5 ohm, N-CHANNEL, Si, POWER, MOSFET
MTD1P40ET4 1 A, 400 V, 8 ohm, P-CHANNEL, Si, POWER, MOSFET
MTD1P40E 1 A, 400 V, 8 ohm, P-CHANNEL, Si, POWER, MOSFET
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