參數(shù)資料
型號(hào)： MTB9N25ET4
廠商： MOTOROLA INC
元件分類(lèi)： JFETs
英文描述： 9 A, 250 V, 0.45 ohm, N-CHANNEL, Si, POWER, MOSFET
文件頁(yè)數(shù)： 7/10頁(yè)
文件大?。?/td> 258K
代理商： MTB9N25ET4
MTB9N25E
6
Motorola TMOS Power MOSFET Transistor Device Data
SAFE OPERATING AREA
Figure 14. Diode Reverse Recovery Waveform
di/dt
trr
ta
tp
IS
0.25 IS
TIME
IS
tb
0
0.5
1
1.5
2.0
2.5
3
25
50
75
100
125
150
TA, AMBIENT TEMPERATURE (°C)
P
D
,POWER
DISSIP
A
TION
(W
A
TTS)
Figure 15. D2PAK Power Derating Curve
RθJA = 50°C/W
Board material = 0.065 mil FR–4
Mounted on the minimum recommended footprint
Collector/Drain Pad Size
≈ 450 mils x 350 mils
Figure 12. Maximum Avalanche Energy versus
Starting Junction Temperature
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
Figure 13. Thermal Response
TJ, STARTING JUNCTION TEMPERATURE (°C)
E AS
,SINGLE
PULSE
DRAIN–T
O–SOURCE
0.1
1.0
100
VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS)
1
100
A
V
ALANCHE
ENERGY
(mJ)
I D
,DRAIN
CURRENT
(AMPS)
RDS(on) LIMIT
THERMAL LIMIT
PACKAGE LIMIT
0.1
0
25
50
75
100
125
50
ID = 9 A
10
150
25
100
75
125
1000
VGS = 20 V
SINGLE PULSE
TC = 25°C
10
s
100
s
1 ms
10 ms
dc
r(t)
,NORMALIZED
EFFECTIVE
TRANSIENT
THERMAL
RESIST
ANCE
R
θJC(t) = r(t) RθJC
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t1
TJ(pk) – TC = P(pk) R
θJC(t)
P(pk)
t1
t2
DUTY CYCLE, D = t1/t2
0.2
0.1
0.05
0.02
0.01
SINGLE PULSE
D = 0.5
0.00001
0.0001
0.01
0.1
1.0
0.01
0.001
0.1
10
1.0
t, TIME (s)
相關(guān)PDF資料
PDF描述
MTC-8308 8-BIT, 40 MHz, RISC PROCESSOR
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