參數(shù)資料
型號(hào)： MTB9N25ET4
廠商： MOTOROLA INC
元件分類： JFETs
英文描述： 9 A, 250 V, 0.45 ohm, N-CHANNEL, Si, POWER, MOSFET
文件頁(yè)數(shù)： 4/10頁(yè)
文件大?。?/td> 258K
代理商： MTB9N25ET4
MTB9N25E
3
Motorola TMOS Power MOSFET Transistor Device Data
TYPICAL ELECTRICAL CHARACTERISTICS
Figure 1. On–Region Characteristics
Figure 2. Transfer Characteristics
Figure 3. On–Resistance versus Drain Current
and Temperature
Figure 4. On–Resistance versus Drain Current
and Gate Voltage
Figure 5. On–Resistance Variation with
Temperature
Figure 6. Drain–To–Source Leakage
Current versus Voltage
0
2
4
6
8
10
9
15
18
VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS)
I D
,DRAIN
CURRENT
(AMPS)
I D
,DRAIN
CURRENT
(AMPS)
VGS, GATE–TO–SOURCE VOLTAGE (VOLTS)
TJ = 25°C
VDS ≥ 10 V
TJ = –55°C
100
°C
6
12
3
5 V
6 V
7 V
VGS = 10 V
2
3
4
5
6
7
0
9
15
18
6
12
3
0
25
°C
8 V
12
9 V
8
R
DS(on)
,DRAIN–T
O–SOURCE
RESIST
ANCE
(OHMS)
R
DS(on)
,DRAIN–T
O–SOURCE
RESIST
ANCE
(OHMS)
0
3
6
9
12
15
0
0.2
0.4
0.8
1.2
ID, DRAIN CURRENT (AMPS)
TJ = 100°C
25
°C
– 55
°C
TJ = 25°C
VGS = 10 V
1.0
0.6
18
0.3
0.4
0.5
0.6
0
3
6
9
12
15
18
15 V
VGS = 10 V
R
DS(on)
,DRAIN–T
O–SOURCE
RESIST
ANCE
(NORMALIZED)
–50
0
0.5
1.0
1.5
2.0
0
100
200
1
10
100
TJ, JUNCTION TEMPERATURE (°C)
VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS)
I DSS
,LEAKAGE
(nA)
–25
0
25
50
75
100
125
150
VGS = 0 V
50
150
250
TJ = 125°C
25
°C
100
°C
VGS = 10 V
ID = 4.5 A
2.5
1000
0.1
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