參數(shù)資料
型號： MTB9N25ET4
廠商： MOTOROLA INC
元件分類： JFETs
英文描述： 9 A, 250 V, 0.45 ohm, N-CHANNEL, Si, POWER, MOSFET
文件頁數(shù)： 3/10頁
文件大小： 258K
代理商： MTB9N25ET4
MTB9N25E
2
Motorola TMOS Power MOSFET Transistor Device Data
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain–to–Source Breakdown Voltage
(VGS = 0 Vdc, ID = 250 Adc)
Temperature Coefficient (Positive)
V(BR)DSS
250
—
328
—
Vdc
mV/
°C
Zero Gate Voltage Drain Current
(VDS = 250 Vdc, VGS = 0 Vdc)
(VDS = 250 Vdc, VGS = 0 Vdc, TJ = 125°C)
IDSS
—
10
100
Adc
Gate–Body Leakage Current (VGS = ± 20 Vdc, VDS = 0 Vdc)
IGSS
—
100
nAdc
ON CHARACTERISTICS (1)
Gate Threshold Voltage
(VDS = VGS, ID = 250 Adc)
Threshold Temperature Coefficient (Negative)
VGS(th)
2.0
—
3.0
7.0
4.0
—
Vdc
mV/
°C
Static Drain–to–Source On–Resistance (VGS = 10 Vdc, ID = 4.5 Adc)
RDS(on)
—
0.37
0.45
Ohm
Drain–to–Source On–Voltage
(VGS = 10 Vdc, ID = 9.0 Adc)
(VGS = 10 Vdc, ID = 4.5 Adc, TJ = 125°C)
VDS(on)
—
3.5
—
5.4
4.7
Vdc
Forward Transconductance (VDS = 15 Vdc, ID = 4.5 Adc)
gFS
3.0
5.2
—
mhos
DYNAMIC CHARACTERISTICS
Input Capacitance
(VDS = 25 Vdc, VGS = 0 Vdc,
f = 1.0 MHz)
Ciss
—
783
1100
pF
Output Capacitance
(VDS = 25 Vdc, VGS = 0 Vdc,
f = 1.0 MHz)
Coss
—
144
200
Transfer Capacitance
f = 1.0 MHz)
Crss
—
32
65
SWITCHING CHARACTERISTICS (2)
Turn–On Delay Time
(VDD = 125 Vdc, ID = 9.0 Adc,
VGS = 10 Vdc,
RG = 9.1 )
td(on)
—
10
20
ns
Rise Time
(VDD = 125 Vdc, ID = 9.0 Adc,
VGS = 10 Vdc,
RG = 9.1 )
tr
—
36
70
Turn–Off Delay Time
VGS = 10 Vdc,
RG = 9.1 )
td(off)
—
27
55
Fall Time
G = 9.1 )
tf
—
26
50
Gate Charge
(See Figure 8)
(VDS = 200 Vdc, ID = 9.0 Adc,
VGS = 10 Vdc)
QT
—
26
40
nC
(See Figure 8)
(VDS = 200 Vdc, ID = 9.0 Adc,
VGS = 10 Vdc)
Q1
—
4.8
—
(VDS = 200 Vdc, ID = 9.0 Adc,
VGS = 10 Vdc)
Q2
—
12.7
—
Q3
—
9.2
—
SOURCE–DRAIN DIODE CHARACTERISTICS
Forward On–Voltage (1)
(IS = 9.0 Adc, VGS = 0 Vdc )
(IS = 9.0 Adc, VGS = 0 Vdc , TJ = 125°C)
VSD
—
0.9
0.81
1.5
—
Vdc
Reverse Recovery Time
(See Figure 14)
(IS = 9.0 Adc, VGS = 0 Vdc,
dlS/dt = 100 A/s)
trr
—
191
—
ns
(See Figure 14)
(IS = 9.0 Adc, VGS = 0 Vdc,
dlS/dt = 100 A/s)
ta
—
126
—
(IS = 9.0 Adc, VGS = 0 Vdc,
dlS/dt = 100 A/s)
tb
—
65
—
Reverse Recovery Stored Charge
QRR
—
1.387
—
C
INTERNAL PACKAGE INDUCTANCE
Internal Drain Inductance
(Measured from the drain lead 0.25
″ from package to center of die)
LD
—
4.5
—
nH
Internal Source Inductance
(Measured from the source lead 0.25
″ from package to source bond pad)
LS
—
7.5
—
nH
(1) Pulse Test: Pulse Width
≤ 300 s, Duty Cycle ≤ 2%.
(2) Switching characteristics are independent of operating junction temperature.
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