參數(shù)資料
型號(hào)： MTB60N06HD
廠商： MOTOROLA INC
元件分類： JFETs
英文描述： TMOS POWER FET 60 AMPERES 60 VOLTS
中文描述： 60 A, 60 V, 0.014 ohm, N-CHANNEL, Si, POWER, MOSFET
文件頁數(shù)： 2/12頁
文件大?。?/td> 280K
代理商： MTB60N06HD
2
Motorola TMOS Power MOSFET Transistor Device Data
ELECTRICAL CHARACTERISTICS
(TJ = 25
°
C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain–to–Source Breakdown Voltage
(VGS = 0 Vdc, ID = 250
μ
Adc)
Temperature Coefficient (Positive)
(Cpk
≥
2.0) (3)
V(BR)DSS
60
—
—
71
—
—
Vdc
mV/
°
C
Zero Gate Voltage Drain Current
(VDS = 60 Vdc, VGS = 0 Vdc)
(VDS = 60 Vdc, VGS = 0 Vdc, TJ = 125
°
C)
IDSS
—
—
—
—
10
100
μ
Adc
Gate–Body Leakage Current
(VGS =
±
20 Vdc, VDS = 0 Vdc)
IGSS
—
—
100
nAdc
ON CHARACTERISTICS (1)
Gate Threshold Voltage
(VDS = VGS, ID = 250
μ
Adc)
Threshold Temperature Coefficient (Negative)
(Cpk
≥
3.0) (3)
VGS(th)
2.0
—
3.0
7.0
4.0
—
Vdc
mV/
°
C
Static Drain–Source On–Resistance
(VGS = 10 Vdc, ID = 30 Adc)
(Cpk
≥
3.0) (3)
RDS(on)
—
0.011
0.014
Ohm
Drain–Source On–Voltage (VGS = 10 Vdc)
(ID = 60 Adc)
(ID = 30 Adc, TJ =125
°
C)
VDS(on)
—
—
—
—
1.0
0.9
Vdc
Forward Transconductance
(VDS = 4.0 Vdc, ID = 30 Adc)
gFS
15
20
—
mhos
DYNAMIC CHARACTERISTICS
Input Capacitance
f = 1.0 MHz)
Ciss
—
1950
2800
pF
Output Capacitance
(VDS = 25 Vdc, VGS = 0 Vdc,
Coss
Crss
—
660
920
Transfer Capacitance
—
147
300
SWITCHING CHARACTERISTICS (2)
Turn–On Delay Time
)
RG = 9.1
td(on)
tr
—
14
26
ns
Rise Time
(VDD= 30 Vdc, ID = 60 Adc,
VGS = 10 Vdc,
—
197
394
Turn–Off Delay Time
td(off)
tf
QT
Q1
Q2
Q3
—
50
102
Fall Time
—
124
246
Gate Charge
(See Figure 8)
VGS = 10 Vdc)
—
51
71
nC
(VDS = 48 Vdc, ID = 60 Adc,
—
12
—
—
24
—
—
21
—
SOURCE–DRAIN DIODE CHARACTERISTICS
Forward On–Voltage
(IS = 60 Adc, VGS = 0 Vdc)
(IS = 60 Adc, VGS = 0 Vdc, TJ = 125
°
C)
VSD
—
—
0.99
0.89
1.0
—
Vdc
Reverse Recovery Time
(See Figure 15)
dIS/dt = 100 A/
μ
s)
trr
ta
—
60
—
ns
(IS = 60 Adc, VGS = 0 Vdc,
—
36
—
tb
—
24
—
Reverse Recovery Stored Charge
QRR
—
0.143
—
μ
C
INTERNAL PACKAGE INDUCTANCE
Internal Drain Inductance
(Measured from the drain lead 0.25
″
from package to center of die)
LD
—
4.5
—
nH
Internal Source Inductance
(Measured from the source lead 0.25
″
from package to source bond pad)
LS
—
7.5
—
nH
(1) Pulse Test: Pulse Width
≤
300
μ
s, Duty Cycle
≤
2%.
(2) Switching characteristics are independent of operating junction temperature.
(3) Reflects typical values. Cpk =
3 x SIGMA
Max limit – Typ
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