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參數資料
| 型號： | MTB10N40ET4 |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | JFETs |
| 英文描述： | 10 A, 400 V, 0.55 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | CASE 418B-02, D2PAK-3 |
| 文件頁數： | 6/11頁 |
| 文件大小： | 276K |
| 代理商： | MTB10N40ET4 |
MTB10N40E
http://onsemi.com
4
TYPICAL ELECTRICAL CHARACTERISTICS
R
DS(on)
,DRAINT
OSOURCE
RESIST
ANCE
(NORMALIZED)
R
DS(on)
,DRAINT
OSOURCE
RESIST
ANCE
(OHMS)
R
DS(on)
,DRAINT
OSOURCE
RESIST
ANCE
(OHMS)
1
3
2
0
50
25
0
25
50
75
100
125
150
VGS = 10 V
TJ = 25°C
100
°C
55
°C
0
0.5
1
1.5
0
5
10
15
20
25
30
0
10
15
20
25
5
01
4
6
7
23
5
8
VDS ≥10 V
TJ = 25°C
100
°C
55
°C
10 V
7 V
5 V
VGS = 6 V
0
8
12
16
20
4
04
8
12
16
20
TJ = 25°C
VDS, DRAINTOSOURCE VOLTAGE (VOLTS)
Figure 1. OnRegion Characteristics
I D
,DRAIN
CURRENT
(AMPS)
I D
,DRAIN
CURRENT
(AMPS)
VGS, GATETOSOURCE VOLTAGE (VOLTS)
Figure 2. Transfer Characteristics
ID, DRAIN CURRENT (AMPS)
Figure 3. OnResistance versus Drain Current
and Temperature
Figure 4. OnResistance versus Drain Current
and Gate Voltage
TJ, JUNCTION TEMPERATURE (°C)
Figure 5. OnResistance Variation with
Temperature
0.55
0.5
0.45
0.4
0.35
0.3
0.25
0
ID, DRAIN CURRENT (AMPS)
510
15
VGS = 10 V
15 V
TJ = 25°C
VDS, DRAINTOSOURCE VOLTAGE (VOLTS)
Figure 6. DrainToSource Leakage
Current versus Voltage
I DSS
,LEAKAGE
(nA)
100
10
1
0.1
150
200
250
300
350
4
100
°C
25
°C
TJ = 125°C
VGS = 0 V
VGS = 10 V
ID = 5 A
0.2
0.4
2
4
20
40
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