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參數(shù)資料
| 型號： | MTB15N06V |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | JFETs |
| 英文描述： | 15 A, 60 V, 0.12 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | CASE 418B-02, D2PAK-3 |
| 文件頁數(shù)： | 1/11頁 |
| 文件大?。?/td> | 274K |
| 代理商： | MTB15N06V |
Semiconductor Components Industries, LLC, 2006
August, 2006 Rev. 3
1
Publication Order Number:
MTB15N06V/D
MTB15N06V
Designer’s Data Sheet
TMOS V
Power Field Effect
Transistor
D2PAK for Surface Mount
NChannel EnhancementMode Silicon
Gate
TMOS V is a new technology designed to achieve an onresistance
area product about onehalf that of standard MOSFETs. This new
technology more than doubles the present cell density of our 50 and 60
volt TMOS devices. Just as with our TMOS EFET designs, TMOS V
is designed to withstand high energy in the avalanche and
commutation modes. Designed for low voltage, high speed switching
applications in power supplies, converters and power motor controls,
these devices are particularly well suited for bridge circuits where
diode speed and commutating safe operating areas are critical and
offer additional safety margin against unexpected voltage transients.
New Features of TMOS V
Onresistance Area Product about Onehalf that of Standard
MOSFETs with New Low Voltage, Low RDS(on) Technology
Faster Switching than EFET Predecessors
Features Common to TMOS V and TMOS EFETs
Avalanche Energy Specified
IDSS and VDS(on) Specified at Elevated Temperature
Static Parameters are the Same for both TMOS V and TMOS EFET
Surface Mount Package Available in 16 mm 13inch/2500 Unit Tape
& Reel, Add T4 Suffix to Part Number
http://onsemi.com
TMOS POWER FET
15 AMPERES, 60 VOLTS
RDS(on) = 0.12 W
D2PAK
CASE 418B02,
Style 2
TM
D
S
G
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相關(guān)代理商/技術(shù)參數(shù) |
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| MTB15N06VT4 | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
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