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參數(shù)資料
| 型號(hào)： | MTB10N40ET4 |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | JFETs |
| 英文描述： | 10 A, 400 V, 0.55 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | CASE 418B-02, D2PAK-3 |
| 文件頁(yè)數(shù)： | 5/11頁(yè) |
| 文件大?。?/td> | 276K |
| 代理商： | MTB10N40ET4 |
MTB10N40E
http://onsemi.com
3
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
DrainSource Breakdown Voltage
(VGS = 0 Vdc, ID = 250 μAdc)
Temperature Coefficient (Positive)
V(BR)DSS
400
—
398
—
Vdc
mV/°C
Zero Gate Voltage Drain Current
(VDS = 400 Vdc, VGS = 0 Vdc)
(VDS = 400 Vdc, VGS = 0 Vdc, TJ = 125°C)
IDSS
—
0.1
1.0
μAdc
GateBody Leakage CurrentForward
(Vgsf = 20 Vdc, VDS = 0)
IGSSF
—
100
nAdc
GateBody Leakage CurrentReverse
(Vgsr = 20 Vdc, VDS = 0)
IGSSR
—
100
nAdc
ON CHARACTERISTICS (1)
Gate Threshold Voltage
(VDS = VGS, ID = 250 μAdc)
Temperature Coefficient (Negative)
VGS(th)
2.0
—
2.8
6.3
4.0
—
Vdc
mV/°C
Static DrainSource OnResistance (VGS = 10 Vdc, ID = 5.0 Adc)
RDS(on)
—
0.4
0.55
Ohm
DrainSource OnVoltage (VGS = 10 Vdc)
(ID = 10 Adc)
(ID = 5.0 Adc, TJ = 125°C)
VDS(on)
—
5.61
—
6.6
5.5
Vdc
Forward Transconductance (VDS = 15 Vdc, ID = 5.0 Adc)
gFS
4.0
—
mhos
DYNAMIC CHARACTERISTICS
Input Capacitance
(VDS = 25 Vdc, VGS = 0 Vdc,
f = 1.0 MHz)
Ciss
—
1570
2200
pF
Output Capacitance
Coss
—
230
325
Reverse Transfer Capacitance
Crss
—
55
110
SWITCHING CHARACTERISTICS (2)
TurnOn Delay Time
(VDD = 200 Vdc, ID = 10 Adc,
VGS = 10 Vdc,
RG = 10 Ω)
td(on)
—
25
50
ns
Rise Time
tr
—
37
75
TurnOff Delay Time
td(off)
—
75
150
Fall Time
tf
—
31
65
Gate Charge
(See Figure 8)
(VDS = 320 Vdc, ID = 10 Adc,
VGS = 10 Vdc)
QT
—
46
63
nC
Q1
—
10
—
Q2
—
23
—
Q3
—
SOURCEDRAIN DIODE CHARACTERISTICS
Forward OnVoltage (1)
(IS = 10 Adc, VGS = 0 Vdc)
(IS = 10 Adc, VGS = 0 Vdc, TJ = 125°C)
VSD
—
0.9
—
2.0
—
Vdc
Reverse Recovery Time
(See Figure 14)
(IS = 10 Adc, VGS = 0 Vdc,
dIS/dt = 100 A/μs)
trr
—
250
—
ns
Reverse Recovery Stored Charge
QRR
—
3000
—
nC
INTERNAL PACKAGE INDUCTANCE
Internal Drain Inductance
(Measured from the tab to center of die)
(Measured from the drain lead 0.25″ from package to center of die)
LD
—
3.5
4.5
—
nH
Internal Source Inductance
(Measured from the source lead 0.25″ from package to source bond pad)
LS
—
7.5
—
nH
(1) Pulse Test: Pulse Width ≤ 300 μs, Duty Cycle ≤ 2%.
(2) Switching characteristics are independent of operating junction temperature.
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