參數(shù)資料
型號: MT58L256V18P1
廠商: Micron Technology, Inc.
英文描述: 256K x 18,Pipelined, SCD SyncBurst SRAM(4Mb,流水線式,單循環(huán)取消選擇,同步脈沖靜態(tài)存儲器)
中文描述: 256 × 18,流水線,SCD的SyncBurst的SRAM(4MB,在流水線式,單循環(huán)取消選擇,同步脈沖靜態(tài)存儲器)
文件頁數(shù): 12/28頁
文件大?。?/td> 445K
代理商: MT58L256V18P1
12
4Mb: 256K x 18, 128K x 32/36 Pipelined, SCD SyncBurst SRAM
MT58L256L18P1_2.p65 – Rev. 8/00
Micron Technology, Inc., reserves the right to change products or specifications without notice.
2000, Micron Technology, Inc.
4Mb: 256K x 18, 128K x 32/36
PIPELINED, SCD SYNCBURST SRAM
PRELIMINARY
INTERLEAVED BURST ADDRESS TABLE (MODE = NC OR HIGH)
FIRST ADDRESS (EXTERNAL)
X...X00
X...X01
X...X10
X...X11
SECOND ADDRESS (INTERNAL) THIRD ADDRESS (INTERNAL)
X...X01
X...X00
X...X11
X...X10
FOURTH ADDRESS (INTERNAL)
X...X11
X...X10
X...X01
X...X00
X...X10
X...X11
X...X00
X...X01
LINEAR BURST ADDRESS TABLE (MODE = LOW)
FIRST ADDRESS (EXTERNAL)
X...X00
X...X01
X...X10
X...X11
SECOND ADDRESS (INTERNAL) THIRD ADDRESS (INTERNAL)
X...X01
X...X10
X...X11
X...X00
FOURTH ADDRESS (INTERNAL)
X...X11
X...X00
X...X01
X...X10
X...X10
X...X11
X...X00
X...X01
FUNCTION
READ
READ
WRITE Byte “a”
WRITE Byte “b”
WRITE All Bytes
WRITE All Bytes
GW#
H
H
H
H
H
L
BWE#
H
L
L
L
L
X
BWa#
X
H
L
H
L
X
BWb#
X
H
H
L
L
X
PARTIAL TRUTH TABLE FOR WRITE COMMANDS (x18)
PARTIAL TRUTH TABLE FOR WRITE COMMANDS (x32/x36)
FUNCTION
READ
READ
WRITE Byte “a”
WRITE All Bytes
WRITE All Bytes
GW#
H
H
H
H
L
BWE#
H
L
L
L
X
BWa#
X
H
L
L
X
BWb#
X
H
H
L
X
BWc#
X
H
H
L
X
BWd#
X
H
H
L
X
NOTE:
Using BWE# and BWa# through BWd#, any one or more bytes may be written.
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