參數(shù)資料
型號(hào)： MT58L256V18P1
廠商： Micron Technology, Inc.
英文描述： 256K x 18，Pipelined, SCD SyncBurst SRAM(4Mb，流水線式，單循環(huán)取消選擇，同步脈沖靜態(tài)存儲(chǔ)器)
中文描述： 256 × 18，流水線，SCD的SyncBurst的SRAM（4MB，在流水線式，單循環(huán)取消選擇，同步脈沖靜態(tài)存儲(chǔ)器）
文件頁(yè)數(shù)： 11/28頁(yè)
文件大小： 445K
代理商： MT58L256V18P1
11
4Mb: 256K x 18, 128K x 32/36 Pipelined, SCD SyncBurst SRAM
MT58L256L18P1_2.p65 – Rev. 8/00
Micron Technology, Inc., reserves the right to change products or specifications without notice.
2000, Micron Technology, Inc.
4Mb: 256K x 18, 128K x 32/36
PIPELINED, SCD SYNCBURST SRAM
PRELIMINARY
FBGA PIN DESCRIPTIONS (continued)
x18
x32/x36
SYMBOL
V
SS
TYPE
Supply Ground:
GND.
DESCRIPTION
2H, 4C, 4N, 5C, 2H, 4C, 4N, 5C,
5D, 5E 5F,
5G, 5H, 5J,
5K, 5L, 5M,
6C,
6D,
6E,
6F,
6G, 6H, 6J,
6K, 6L, 6M,
7C, 7D, 7E,
7F, 7G, 7H,
7J, 7K, 7L,
7M, 7N, 8C, 8N 7M, 7N, 8C, 8N
5P, 5R, 7P, 7R 5P, 5R, 7P, 7R
5D, 5E 5F,
5G, 5H, 5J,
5K, 5L, 5M,
6C,
6D,
6E,
6F,
6G, 6H, 6J,
6K, 6L, 6M,
7C, 7D, 7E,
7F, 7G, 7H,
7J, 7K, 7L,
DNU
–
Do Not Use: These signals may either be unconnected or wired to
GND to improve package heat dissipation.
No Connect: These signals are not internally connected and
may be connected to ground to improve package heat
dissipation. Pins 11P, and 6N reserved for address pin
expansion; 8Mb, and 16Mb respectively.
1A, 1B, 1C,
1D, 1E, 1F,
1G, 1P, 2C,
2J, 2K,
2L, 2M, 2N,
2P, 2R, 3H,
4B, 5A, 5N,
6N, 9H, 10C,
10D, 10E, 10F,
10G, 10H,
10N, 11B,
11J, 11K,
11L, 11M,
11N, 11P
1A, 1B, 1P,
2C, 2N,
2P, 2R, 3H,
5N, 6N,
9H, 10C,
10H, 10N,
11A, 11B,
11P
NC
–
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參數(shù)描述
MT58L256V18P1T-5 制造商:Cypress Semiconductor 功能描述:256KX18 SRAM PLASTIC TQFP 3.3V
MT58L256V18P1T-7.5 制造商:Rochester Electronics LLC 功能描述:- Bulk 制造商:Micron Technology Inc 功能描述:
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MT58L256V32P 制造商:MICRON 制造商全稱:Micron Technology 功能描述:8Mb: 512K x 18, 256K x 32/36 PIPELINED, SCD SYNCBURST SRAM
MT58L256V32PF-6 制造商:Cypress Semiconductor 功能描述:256KX32 SRAM PLASTIC FBGA 3.3V 制造商:Rochester Electronics LLC 功能描述:- Bulk
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