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參數(shù)資料
| 型號： | MT58L128L32D1 |
| 廠商： | Micron Technology, Inc. |
| 英文描述： | 128K x 32，3.3V I/O Pipelined, DCD SyncBurst SRAM(4Mb，3.3V輸入/輸出，流水線式，雙循環(huán)取消選擇，同步脈沖靜態(tài)存儲器) |
| 中文描述： | 128K的x 32,3.3六/輸出流水線，雙氰胺SyncBurst的SRAM（4MB，在3.3V的輸入/輸出，流水線式，雙循環(huán)取消選擇，同步脈沖靜態(tài)存儲器） |
| 文件頁數(shù)： | 18/24頁 |
| 文件大小： | 425K |
| 代理商： | MT58L128L32D1 |
18
4Mb: 256K x 18, 128K x 32/36 3.3V I/O Pipelined, DCD SyncBurst SRAM
MT58L256L18D1_2.p65 – Rev 8/00
Micron Technology, Inc., reserves the right to change products or specifications without notice.
1999, Micron Technology, Inc.
4Mb: 256K x 18, 128K x 32/36
3.3V I/O PIPELINED, DCD SYNCBURST SRAM
PRELIMINARY
SNOOZE MODE
SNOOZE MODE is a low-current, “power-down”
mode in which the device is deselected and current is
reduced to I
SB
2
Z
. The duration of SNOOZE MODE is
dictated by the length of time ZZ is in a HIGH state.
After the device enters SNOOZE MODE, all inputs
except ZZ become gated inputs and are ignored.
ZZ is an asynchronous, active HIGH input that
causes the device to enter SNOOZE MODE. When ZZ
becomes a logic HIGH, I
SB
2
Z
is guaranteed after the
setup time
t
ZZ is met. Any READ or WRITE operation
pending when the device enters SNOOZE MODE is not
guaranteed to complete successfully. Therefore, SNOOZE
MODE must not be initiated until valid pending opera-
tions are completed.
SNOOZE MODE ELECTRICAL CHARACTERISTICS
DESCRIPTION
Current during SNOOZE MODE
ZZ active to input ignored
ZZ inactive to input sampled
ZZ active to snooze current
ZZ inactive to exit snooze current
CONDITIONS
ZZ
3
V
IH
SYMBOL
I
SB
2Z
t
ZZ
t
RZZ
t
ZZI
t
RZZI
MIN
MAX
10
2(
t
KC)
UNITS
mA
ns
ns
ns
ns
NOTES
1
1
1
1
2(
t
KC)
2(
t
KC)
0
NOTE:
1. This parameter is sampled.
SNOOZE MODE WAVEFORM
tZZ
I
SUPPLY
CLK
ZZ
tRZZ
ALL INPUTS
(except ZZ)
DON’T CARE
IISB2Z
tZZI
tRZZI
Outputs (Q)
High-Z
DESELECT or READ Only
相關PDF資料 |
PDF描述 |
|---|---|
| MT58L128L36D1 | 128K x 36，3.3V I/O Pipelined, DCD SyncBurst SRAM(4Mb，3.3V輸入/輸出，流水線式，雙循環(huán)取消選擇，同步脈沖靜態(tài)存儲器) |
| MT58L128L32P1 | 128K x 32，Pipelined, SCD SyncBurst SRAM(4Mb，流水線式，單循環(huán)取消選擇，同步脈沖靜態(tài)存儲器) |
| MT58L128L36P1 | 128K x 36，Pipelined, SCD SyncBurst SRAM(4Mb，流水線式，單循環(huán)取消選擇，同步脈沖靜態(tài)存儲器) |
| MT58L128V32P1 | 128K x 32， Pipelined, SCD SyncBurst SRAM(4Mb，流水線式，單循環(huán)取消選擇，同步脈沖靜態(tài)存儲器) |
| MT58L256L18P1 | 256K x 18,Pipelined, SCD SyncBurst SRAM(4Mb，流水線式，單循環(huán)取消選擇，同步脈沖靜態(tài)存儲器) |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| MT58L128L32D1F-6 | 制造商:Micron Technology Inc 功能描述: |
| MT58L128L32D1T-10 | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
| MT58L128L32D1T10A | 制造商:Micron Technology Inc 功能描述: |
| MT58L128L32D1T-7.5 | 制造商:Cypress Semiconductor 功能描述:128KX32 SRAM PLASTIC TQFP 3.3V |
| MT58L128L32DT-75 | 制造商:Micron Technology Inc 功能描述: |
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