- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄384758 > MT58L128L32D1 (Micron Technology, Inc.) 128K x 32，3.3V I/O Pipelined, DCD SyncBurst SRAM(4Mb，3.3V輸入/輸出，流水線式，雙循環(huán)取消選擇，同步脈沖靜態(tài)存儲器) PDF資料下載
參數(shù)資料
| 型號： | MT58L128L32D1 |
| 廠商： | Micron Technology, Inc. |
| 英文描述： | 128K x 32，3.3V I/O Pipelined, DCD SyncBurst SRAM(4Mb，3.3V輸入/輸出，流水線式，雙循環(huán)取消選擇，同步脈沖靜態(tài)存儲器) |
| 中文描述： | 128K的x 32,3.3六/輸出流水線，雙氰胺SyncBurst的SRAM（4MB，在3.3V的輸入/輸出，流水線式，雙循環(huán)取消選擇，同步脈沖靜態(tài)存儲器） |
| 文件頁數(shù)： | 15/24頁 |
| 文件大?。?/td> | 425K |
| 代理商： | MT58L128L32D1 |
15
4Mb: 256K x 18, 128K x 32/36 3.3V I/O Pipelined, DCD SyncBurst SRAM
MT58L256L18D1_2.p65 – Rev 8/00
Micron Technology, Inc., reserves the right to change products or specifications without notice.
1999, Micron Technology, Inc.
4Mb: 256K x 18, 128K x 32/36
3.3V I/O PIPELINED, DCD SYNCBURST SRAM
PRELIMINARY
NOTE:
1. I
DD
is specified with no output current and increases with faster cycle times. I
DD
Q increases with faster cycle times and
greater output loading.
2. “ Device deselected” means device is in power-down mode as defined in the truth table. “ Device selected” means
device is active (not in power-down mode).
3. Typical values are measured at 3.3V, 25°C and 10ns cycle time.
4. This parameter is sampled.
5. Preliminary package data.
MA X
TQFP THERMAL RESISTANCE
DESCRIPTION
Thermal Resistance
(Junction to Ambient)
CONDITIONS
SYMBOL
q
JA
TYP
46
UNITS NOTES
°C/W
Test conditions follow standard test methods
and procedures for measuring thermal
impedance, per EIA/JESD51.
4
Thermal Resistance
(Junction to Top of Case)
q
JC
2.8
4
FBGA THERMAL RESISTANCE
DESCRIPTION
Junction to Ambient
(Airflow of 1m/s)
CONDITIONS
SYMBOL
q
JA
TYP
40
UNITS NOTES
°C/W
Test conditions follow standard test methods
and procedures for measuring thermal
impedance, per EIA/JESD51.
4, 5
Junction to Case (Top)
Junction to Pins
(Bottom)
q
JC
q
JB
9
17
°C/W
°C/W
4, 5
4, 5
I
DD
OPERATING CONDITIONS AND MAXIMUM LIMITS
(0°C
￡
T
A
￡
+70°C; V
DD
, V
DD
Q = +3.3V +0.3V/-0.165V unless otherwise noted)
DESCRIPTION
Power Supply
Current:
Operating
Power Supply
Current: Idle
CONDITIONS
S Y M
T Y P
-6
-7.5
-10
UNITS NOTES
Device selected; All inputs
￡
V
IL
or
3
V
IH
; Cycle time
3
t
KC (MIN);
V
DD
= MAX; Outputs open
Device selected; V
DD
= MAX;
ADSC#, ADSP#, GW#, BWx#, ADV#
3
V
IH
; All inputs
￡
V
SS
+ 0.2 or
3
V
DD
- 0.2;
Cycle time
3
t
KC (MIN)
Device deselected; V
DD
= MAX;
All inputs
￡
V
SS
+ 0.2 or
3
V
DD
- 0.2;
All inputs static; CLK frequency = 0
Device deselected; V
DD
= MAX;
All inputs
￡
V
IL
or
3
V
IH
;
All inputs static; CLK frequency = 0
Device deselected; V
DD
= MAX;
ADSC#, ADSP#, GW#, BWx#, ADV#
3
V
IH
; All inputs
￡
V
SS
+ 0.2 or
3
V
DD
- 0.2;
Cycle time
3
t
KC (MIN)
I
DD
225
475
375
300
mA
1, 2, 3
I
DD
1
55
110
90
85
mA
1, 2, 3
CMOS Standby
I
SB
2
0.4
10
10
10
mA
2, 3
TTL Standby
I
SB
3
8
25
25
25
mA
2, 3
Clock Running
I
SB
4
55
110
90
85
mA
2, 3
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| MT58L128L36D1 | 128K x 36，3.3V I/O Pipelined, DCD SyncBurst SRAM(4Mb，3.3V輸入/輸出，流水線式，雙循環(huán)取消選擇，同步脈沖靜態(tài)存儲器) |
| MT58L128L32P1 | 128K x 32，Pipelined, SCD SyncBurst SRAM(4Mb，流水線式，單循環(huán)取消選擇，同步脈沖靜態(tài)存儲器) |
| MT58L128L36P1 | 128K x 36，Pipelined, SCD SyncBurst SRAM(4Mb，流水線式，單循環(huán)取消選擇，同步脈沖靜態(tài)存儲器) |
| MT58L128V32P1 | 128K x 32， Pipelined, SCD SyncBurst SRAM(4Mb，流水線式，單循環(huán)取消選擇，同步脈沖靜態(tài)存儲器) |
| MT58L256L18P1 | 256K x 18,Pipelined, SCD SyncBurst SRAM(4Mb，流水線式，單循環(huán)取消選擇，同步脈沖靜態(tài)存儲器) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MT58L128L32D1F-6 | 制造商:Micron Technology Inc 功能描述: |
| MT58L128L32D1T-10 | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
| MT58L128L32D1T10A | 制造商:Micron Technology Inc 功能描述: |
| MT58L128L32D1T-7.5 | 制造商:Cypress Semiconductor 功能描述:128KX32 SRAM PLASTIC TQFP 3.3V |
| MT58L128L32DT-75 | 制造商:Micron Technology Inc 功能描述: |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。