參數(shù)資料
型號(hào)： MT48LC4M16A2
廠商： Micron Technology, Inc.
英文描述： SYNCHRONOUS DRAM
中文描述： 同步DRAM
文件頁數(shù)： 21/55頁
文件大?。?/td> 1458K
代理商： MT48LC4M16A2
21
64Mb: x4, x8, x16 SDRAM
64MSDRAM_F.p65 – Rev. F; Pub. 1/03
Micron Technology, Inc., reserves the right to change products or specifications without notice.
2003, Micron Technology, Inc.
64Mb: x4, x8, x16
SDRAM
WRITEs
WRITE bursts are initiated with a WRITE command,
as shown in Figure 13.
The starting column and bank addresses are
provided with the WRITE command, and auto
precharge is either enabled or disabled for that access.
If auto precharge is enabled, the row being accessed is
precharged at the completion of the burst. For the ge-
neric WRITE commands used in the following illustra-
tions, auto precharge is disabled.
During WRITE bursts, the first valid data-in ele-
ment will be registered coincident with the WRITE com-
mand. Subsequent data elements will be registered on
each successive positive clock edge. Upon completion
of a fixed-length burst, assuming no other commands
have been initiated, the DQs will remain High-Z and
any additional input data will be ignored (see Figure
14). A full-page burst will continue until terminated.
(At the end of the page, it will wrap to column 0 and
continue.)
Data for any WRITE burst may be truncated with a
subsequent WRITE command, and data for a fixed-
length WRITE burst may be immediately followed by
data for a WRITE command. The new WRITE command
can be issued on any clock following the previous WRITE
command, and the data provided coincident with the
new command applies to the new command.
Figure 15
WRITE to WRITE
An example is shown in Figure 15. Data
n
+ 1 is either
the last of a burst of two or the last desired of a longer
burst. The 64Mb SDRAM uses a pipelined architecture
and therefore does not require the 2
n
rule associated
with a prefetch architecture. A WRITE command can
be initiated on any clock cycle following a previous
WRITE command. Full-speed random write accesses
within a page can be performed to the same bank, as
shown in Figure 16, or each subsequent WRITE may be
performed to a different bank.
Figure 14
WRITE Burst
CS#
WE#
CAS#
RAS#
CKE
CLK
COLUMN
A10
HIGH
ENABLE AUTO PRECHARGE
DISABLE AUTO PRECHARGE
A0-A9: x4
A0-A8: x8
A0-A7: x16
A11: x4
A9, A11: x8
A8, A9, A11: x16
BA0,1
ABANK
Figure 13
WRITE Command
CLK
DQ
T2
T1
T0
COMMAND
ADDRESS
NOP
WRITE
WRITE
BANK,
COL
n
BANK,
COL
b
D
IN
n
D
IN
n
+ 1
D
IN
b
NOTE:
DQM is LOW. Each WRITE command may
be to any bank.
DON’T CARE
TRANSITIONING DATA
CLK
DQ
D
IN
n
T2
T1
T3
T0
COMMAND
ADDRESS
NOP
NOP
DON’T CARE
WRITE
D
IN
n
+ 1
NOP
BANK,
COL
n
NOTE:
Burst length = 2. DQM is LOW.
TRANSITIONING DATA
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