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| 型號(hào)： | MT48LC4M16A2 |
| 廠商： | Micron Technology, Inc. |
| 英文描述： | SYNCHRONOUS DRAM |
| 中文描述： | 同步DRAM |
| 文件頁(yè)數(shù)： | 16/55頁(yè) |
| 文件大?。?/td> | 1458K |
| 代理商： | MT48LC4M16A2 |
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16
64Mb: x4, x8, x16 SDRAM
64MSDRAM_F.p65 – Rev. F; Pub. 1/03
Micron Technology, Inc., reserves the right to change products or specifications without notice.
2003, Micron Technology, Inc.
64Mb: x4, x8, x16
SDRAM
before the clock edge at which the last desired data
element is valid, where
x
equals the CAS latency minus
one. This is shown in Figure 7 for CAS latencies of two
and three; data element
n
+ 3 is either the last of a burst
of four or the last desired of a longer burst. The 64Mb
SDRAM uses a pipelined architecture and therefore
Figure 7
Consecutive READ Bursts
does not require the 2
n
rule associated with a prefetch
architecture. A READ command can be initiated on any
clock cycle following a previous READ command. Full-
speed random read accesses can be performed to the
same bank, as shown in Figure 8, or each subsequent
READ may be performed to a different bank.
DON’T CARE
NOTE:
Each READ command may be to any bank. DQM is LOW.
CLK
DQ
D
OUT
n
T2
T1
T4
T3
T6
T5
T0
COMMAND
ADDRESS
READ
NOP
NOP
NOP
NOP
BANK,
COL
n
NOP
BANK,
COL
b
D
OUT
n
+ 1
D
OUT
n
+ 2
D
OUT
n
+ 3
D
OUT
b
READ
X = 1 cycle
CAS Latency = 2
CLK
DQ
D
OUT
n
T2
T1
T4
T3
T6
T5
T0
COMMAND
ADDRESS
READ
NOP
NOP
NOP
NOP
BANK,
COL
n
NOP
BANK,
COL
b
D
OUT
n
+ 1
D
OUT
n
+ 2
D
OUT
n
+ 3
D
OUT
b
READ
NOP
T7
X = 2 cycles
CAS Latency = 3
TRANSITIONING DATA
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