參數(shù)資料
型號: MT16JSF25664HY-80BXX
元件分類: DRAM
英文描述: 256M X 64 DDR DRAM MODULE, ZMA204
封裝: LEAD FREE, MO-268, SODIMM-204
文件頁數(shù): 5/20頁
文件大小: 651K
代理商: MT16JSF25664HY-80BXX
PDF: 09005aef83021ee3/Source: 09005aef83021f5a
Micron Technology, Inc., reserves the right to change products or specifications without notice.
JSF16C256x64H.fm - Rev. B 6/09 EN
13
2008 Micron Technology, Inc. All rights reserved
2GB (x64, DR) 204-Pin DDR3 SDRAM SODIMM
Temperature Sensor with Serial Presence-Detect EEPROM
The interrupt mode enables software to reset EVENT# after a critical temperature
threshold has been detected. Threshold points are set in the configuration register by the
user. This mode triggers the critical temperature limit and both the MIN and MAX of the
temperature window.
The compare mode is similar to the interrupt mode, except EVENT# cannot be reset by
the user and only returns to the logic HIGH state when the temperature falls below the
programmed thresholds.
Critical temperature mode triggers EVENT# only when the temperature has exceeded
the programmed critical trip point. When the critical trip point has been reached, the
temperature sensor goes into comparator mode, and the critical EVENT# cannot be
cleared through software.
SM Bus Slave Subaddress Decoding
The temperature sensor’s physical address differs from the SPD EEPROM’s physical
address: 0011 for A0, A1, A2, and RW# in binary where A2, A1, and A0 are the three slave
subaddress pins, and the RW# bit is the READ/WRITE flag.
If the slave base address is fixed for the temperature sensor/SPD EEPROM, then the pins
set the subaddress bits of the slave address, enabling the devices to be located anywhere
within the eight slave address locations. For example, they could be set from 30h to 3Eh.
Figure 3:
EVENT# Pin Functionality
Time
Temperature
Critical
Alarm window (MAX)
Alarm window (MIN)
EVENT#
interrupt mode
EVENT#
comparator mode
EVENT#
critical temperature only mode
Clears event
Hysteresis affects
these trip points
相關(guān)PDF資料
PDF描述
MT16LSDT12864AG-133XX 128M X 64 SYNCHRONOUS DRAM MODULE, 5.4 ns, DMA168
MT18VDVF6472DG-262XX 64M X 72 DDR DRAM MODULE, 0.75 ns, DMA184
MT18VDVF6472DG-265XX 64M X 72 DDR DRAM MODULE, 0.75 ns, DMA184
MT2S3216D-20 32K X 16 MULTI DEVICE SRAM MODULE, 20 ns, DMA40
MT46H256M32LFCM-5:A 256M X 32 DDR DRAM, 5 ns, PBGA90
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
MT16JSF25664HZ-1G1D1 制造商:Micron Technology Inc 功能描述:2GB 256MX64 DDR3 SDRAM MODULE PBF SODIMM 1.5V NON BUF - Trays
MT16JSF25664HZ-1G1D1 TR 制造商:Micron Technology Inc 功能描述:2GB 256MX64 DDR3 SDRAM MODULE PBF SODIMM 1.5V NON BUF - Tape and Reel
MT16JSF25664HZ-1G1F1 制造商:Micron Technology Inc 功能描述:2GB 256MX64 DDR3 SDRAM MODULE PBF SODIMM 1.5V NON BUF - Trays
MT16JSF25664HZ-1G6FZES 制造商:Micron Technology Inc 功能描述:MT16JSF25664HZ-1G6FZES - Trays
MT16JSF51264HZ-1G1D1 功能描述:MODULE DDR3 SDRAM 4GB 204SODIMM RoHS:是 類別:存儲卡,模塊 >> 存儲器 - 模塊 系列:- 標(biāo)準(zhǔn)包裝:100 系列:- 存儲器類型:SDRAM 存儲容量:1GB 速度:133MHz 特點(diǎn):- 封裝/外殼:168-DIMM