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參數(shù)資料
| 型號： | MT16JSF25664HY-80BXX |
| 元件分類： | DRAM |
| 英文描述： | 256M X 64 DDR DRAM MODULE, ZMA204 |
| 封裝： | LEAD FREE, MO-268, SODIMM-204 |
| 文件頁數(shù)： | 3/20頁 |
| 文件大?。?/td> | 651K |
| 代理商： | MT16JSF25664HY-80BXX |
PDF: 09005aef83021ee3/Source: 09005aef83021f5a
Micron Technology, Inc., reserves the right to change products or specifications without notice.
JSF16C256x64H.fm - Rev. B 6/09 EN
11
2008 Micron Technology, Inc. All rights reserved
2GB (x64, DR) 204-Pin DDR3 SDRAM SODIMM
Electrical Specifications
IDD Specifications
Notes:
1. One module rank in the active IDD; the other rank in IDD2P (slow exit).
2. All ranks in this IDD condition.
Table 9:
DDR3 IDD Specifications and Conditions – 2GB
Values are for the MT41J128M8 DDR3 SDRAM only and are computed from values specified in the
1Gb (128 Meg x 8) component data sheet
Parameter
Symbol
1333
1066
800
Units
Operating current 0: One bank ACTIVATE-to-PRECHARGE
IDD01
960
880
800
mA
Operating current 1: One bank ACTIVATE-to-READ-to-PRECHARGE
IDD11
1,120
960
mA
Precharge power-down current: Slow exit
IDD2P2
160
mA
Precharge power-down current: Fast exit
IDD2P2
400
mA
Precharge quiet standby current
800
720
640
mA
Precharge standby current
IDD2N2
880
800
720
mA
Active power-down current
IDD3P2
560
480
400
mA
Active standby current
IDD3N2
960
880
800
mA
Burst read operating current
1,680
1,360
1,120
mA
Burst write operating current
IDD4W1
1,600
1,360
1,120
mA
Refresh current
3,840
3,520
3,200
mA
Self refresh temperature current: MAX TC = 85°C
IDD62
96
mA
Self refresh temperature current (SRT-enabled): MAX TC = 95°C
144
mA
All banks interleaved read current
IDD71
4,400
3,200
2,880
mA
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MT16JSF25664HZ-1G1D1 | 制造商:Micron Technology Inc 功能描述:2GB 256MX64 DDR3 SDRAM MODULE PBF SODIMM 1.5V NON BUF - Trays |
| MT16JSF25664HZ-1G1D1 TR | 制造商:Micron Technology Inc 功能描述:2GB 256MX64 DDR3 SDRAM MODULE PBF SODIMM 1.5V NON BUF - Tape and Reel |
| MT16JSF25664HZ-1G1F1 | 制造商:Micron Technology Inc 功能描述:2GB 256MX64 DDR3 SDRAM MODULE PBF SODIMM 1.5V NON BUF - Trays |
| MT16JSF25664HZ-1G6FZES | 制造商:Micron Technology Inc 功能描述:MT16JSF25664HZ-1G6FZES - Trays |
| MT16JSF51264HZ-1G1D1 | 功能描述:MODULE DDR3 SDRAM 4GB 204SODIMM RoHS:是 類別:存儲卡，模塊 >> 存儲器 - 模塊 系列:- 標(biāo)準(zhǔn)包裝:100 系列:- 存儲器類型:SDRAM 存儲容量:1GB 速度:133MHz 特點(diǎn):- 封裝/外殼:168-DIMM |
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