參數(shù)資料
型號(hào)： MSM548263
廠商： OKI SEMICONDUCTOR CO., LTD.
英文描述： 262,144-Word ×8-Bit Multiport DRAM(256k字×8位多端口動(dòng)態(tài)RAM)
中文描述： 262,144字× 8位多端口內(nèi)存（256k字× 8位多端口動(dòng)態(tài)RAM）的
文件頁(yè)數(shù)： 38/40頁(yè)
文件大?。?/td> 390K
代理商： MSM548263
Semiconductor
MSM548263
38/40
SAM Stop Set Cycle (CBRS):
RAS
falling edge ---
CAS
= "L",
WE
= "L", DSF = "H"
SAM Stop location data (boundaries) are latched from address inputs at the falling edge of
RAS
.
To determine the boundary A4 - A7 are used, and A0 - A3, and A8 are ignored.
Once the CBRS is executed, the programmable SAM stop operation continues until CBRR.
SAM Stop Boundary Table
Number of Stop Points
1
2
4
8
16
Address
A5
1
1
1
0
X
A4
1
1
1
1
0
A6
1
1
0
X
X
A7
1
0
X
X
X
256
128
64
32
16
Size of Partition
Register Reset Cycle (CBRR):
RAS
falling edge ---
CAS
= "L",
WE
= "H", DSF = "L"
A CBRR can reset the programmable SAM stop operation, and persistent mask write operation.
The CBRR will take effect immediately; it doesn’t require a split transfer cycle.
POWER UP
Power must be applied to the
RAS
and
TRG
input signals to pull them "high" before, or at the
same time as, the V
CC
supply is turned on. After power-up, a pause of 200
m
s minimum is
required with
RAS
and
TRG
held "high". After the pause, a minimum of 8
RAS
and 8 SC dummy
cycles must be performed to stabilize the internal circuitry, before valid read, write or transfer
operations can begin. During the initialization period, the
TRG
signal must be held "high". If the
internal refresh counter is used, a minimum 8
CAS
before
RAS
cycles are required instead of 8
RAS
cycles.
(NOTE) INITIAL STATE AFTER POWER UP
The initial state can not be guaranteed for various power up conditions and input signal levels.
Therefore, it is recommended that the initial state be set (ex. Perform a CBRR cycle to select Non
Persistent Write-per-bit mode) after the initialization of the device is performed and before valid
operations begin.
相關(guān)PDF資料
PDF描述
MSM548512L-XXGS-K 524,288-Word X 8-Bit High-Speed PSRAM
MSM548512L 524,288-Word X 8-Bit High-Speed PSRAM
MSM548512L-10GS-K 524,288-Word X 8-Bit High-Speed PSRAM
MSM548512L-10RS 524,288-Word X 8-Bit High-Speed PSRAM
MSM548512L-12GS-K 524,288-Word X 8-Bit High-Speed PSRAM
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
MSM548263-60JS 制造商:ROHM Semiconductor 功能描述:
MSM548263-60TS-K 制造商:OK International 功能描述:
MSM54V12222A-30TS-K 制造商:OKI Semiconductor 功能描述:FIELD/FRAME/LINE MEMORY, 44 Pin, Plastic, TSOP
MSM54V12222B-25JDR17 制造商:ROHM Semiconductor 功能描述:
MSM54V12222B-25JSDR1 制造商:ROHM Semiconductor 功能描述:
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