參數(shù)資料
型號: MSM548512L-10GS-K
廠商: OKI SEMICONDUCTOR CO., LTD.
英文描述: 524,288-Word X 8-Bit High-Speed PSRAM
中文描述: 524,288字× 8位高速移動存儲芯片
文件頁數(shù): 1/12頁
文件大?。?/td> 172K
代理商: MSM548512L-10GS-K
Semiconductor
MSM548512L
1/12
524,288-Word
8-Bit High-Speed PSRAM
DESCRIPTION
The MSM548512L is fabricated using OKI’s CMOS silicon gate process technology. This process,
coupled with single-transister memory storage cells, permits maximum circuit density, minimum
chip size and high speed.
MSM548512L has Self-refresh mode in addition to Address-refresh mode and Auto-refresh
mode. In the Self-refresh mode the internal refresh timer and address counter refresh the
dynamic memory cells automatically. This series allows low power consumption when using
standby mode with Self-refresh.
The MSM548512L also features a static RAM-like write function that writes the data into the
memory cell at the rising edge of
WE
.
FEATURES
Large capacity
Fast access time
Low power
Refresh free
Logic compatible
Single power supply
Refresh
Package compatible
Package options:
32-pin 600 mil plastic DIP
32-pin 525 mil plastic SOP
:
:
:
:
:
:
:
:
4-Mbit (524,288-word
8 bits)
80 ns max.
200
μ
A max. (standby with Self-refresh)
Self refresh
SRAM
WE
pin, no address multiplex
5 V
±
10%
2048 cycle/32 ms auto-address refresh
SRAM standard package
(DIP32-P-600-2.54)
(SOP32-P-525-1.27-K) (Product : MSM548512L-xxGS-K)
xx indicates speed rank.
(Product : MSM548512L-xxRS)
PRODUCT FAMILY
Family
Package
Access Time (Max.)
80 ns
100 ns
120 ns
80 ns
100 ns
120 ns
MSM548512L-80RS
MSM548512L-10RS
MSM548512L-12RS
MSM548512L-80GS-K
MSM548512L-10GS-K
MSM548512L-12GS-K
600 mil 32-pin
Plastic DIP
525 mil 32-pin
Plastic SOP
This version: Jan. 1998
Previous version: Dec. 1996
E2L0044-17-Y1
相關(guān)PDF資料
PDF描述
MSM548512L-10RS 524,288-Word X 8-Bit High-Speed PSRAM
MSM548512L-12GS-K 524,288-Word X 8-Bit High-Speed PSRAM
MSM548512L-12RS 524,288-Word X 8-Bit High-Speed PSRAM
MSM548512L-80GS-K 524,288-Word X 8-Bit High-Speed PSRAM
MSM548512L-80RS 524,288-Word X 8-Bit High-Speed PSRAM
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