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參數(shù)資料
| 型號(hào)： | MSAFA1N100P3L |
| 廠商： | MICROSEMI CORP |
| 元件分類： | JFETs |
| 英文描述： | 1 A, 1000 V, 14 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 文件頁數(shù)： | 2/2頁 |
| 文件大?。?/td> | 44K |
| 代理商： | MSAFA1N100P3L |
www.MICROSEMI.com
Data Sheet # MSC
Updated: December 1999
2830 south Fairview Street, Santa Ana, CA 92704 USA (714)979.8220 FAX (714)557.5989
Santa Ana Division
Dynamic Electrical Characteristics
MSAFA1N100P3
Fast MOSFET for
Implantable Cardio Defibrillator
Applicaions
SYMBOL
CHARACTERISTIC
TEST CONDITIONS
MIN
TYP
MAX
UNIT
Ciss
Input Capacitance
VGS = 0V
290
350
pF
Coss
Output Capacitance
VDS = 25V
36
45
pF
Crss
Reverse Transfer Capacitance
f = 1 MHz
15
25
pF
Qg
Total Gate Charge
VGS = 10V
20
nC
Qgs
Gate-Source Charge
VDS = 0.5BVDSS
1
nC
Qgd
Gate-Drain ("Miller") Charge
IC = 20 mA
10
nC
td (on)
Turn-on Delay Time
Resistive Switching (25C)
6.3
ns
tr
Rise Time
VGS = 10V, VDS = 0.5BVDSS
5.9
ns
td (off)
Turn-off Delay Time
ID = 20 mA
315
ns
tf
Fall Time
Rg = 1.6 Ohms
2.6
us
td (on)
Turn-On Delay Time
Resistive Switching (25C)
6.3
ns
tr
Rise Time
VGS = 10V, VDS = 0.5BVDSS
5.8
ns
td (off)
Turn-off Delay Time
ID = 100 mA
76
ns
tf
Fall Time
Rg = 1.6 Ohms
470
ns
VSD
Diode Forward Voltage
VGS =0 V, IS = 1 A
1
V
trr
Reverse Recovery Time
IS = 1 A, d IS / dt = 100 A/us
130
ns
Qrr
Reverse Recovery Charge
IS = 1 A, d IS / dt = 100 A/us
0.7
uC
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