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參數(shù)資料
| 型號： | MSAEI30N20A |
| 廠商： | MICROSEMI CORP |
| 元件分類： | 功率晶體管 |
| 英文描述： | Si, N-CHANNEL, RF POWER, MOSFET |
| 封裝： | HERMETIC SEALED, POWER PACKAGE-3 |
| 文件頁數(shù)： | 1/2頁 |
| 文件大小： | 51K |
| 代理商： | MSAEI30N20A |
MSAEI30N20A
MSAFI30N20A
200 Volts
30 Amps
85 m
Features
Ultrafast rectifier in parallel with the body diode (MSAE type only)
Rugged polysilicon gate cell structure
Increased Unclamped Inductive Switching (UIS) capability
Hermetically sealed, surface mount power package
Low package inductance
Very low thermal resistance
Reverse polarity available upon request
DESCRIPTION
SYMBOL
MAX.
UNIT
Drain-to-Source Breakdown Voltage (Gate Shorted to Source)
@ TJ
≥ 25°C
BVDSS
200
Volts
Drain-to-Gate Breakdown Voltage @ TJ
≥ 25°C, RGS= 1 M
BVDGR
200
Volts
Continuous Gate-to-Source Voltage
VGS
+/-20
Volts
Transient Gate-to-Source Voltage
VGSM
+/-30
Volts
Continuous Drain Current
Tj= 25
°C
Tj=
100
°C
ID25
ID100
30
19
Amps
Peak Drain Current, pulse width limited by TJmax
IDM
120
Amps
Repetitive Avalanche Current
IAR
30
Amps
Repetitive Avalanche Energy
EAR
15
mJ
Single Pulse Avalanche Energy
EAS
200
mJ
Voltage Rate of Change of the Recovery Diode
@ IS
≤ IDM, di/dt ≤ 100 A/s, VDD ≤ VDSS, TJ ≤ 150°C
dv/dt
5.0
V/ns
Power Dissipation
PD
300
Watts
Junction Temperature Range
Tj
-55 to +150
°C
Storage Temperature Range
Tstg
-55 to +150
°C
Continuous Source Current (Body Diode)
IS
30
Amps
Pulse Source Current (Body Diode)
ISM
120
Amps
Thermal Resistance, Junction to Case
θ
JC
0.4
°C/W
Maximum Ratings @ 25
°°C (unless otherwise specified)
Mechanical Outline
Datasheet# MSC0256 Rev. A 11/6/96
2830 S. Fairview St.
Santa Ana, CA 92704
PH: (714) 979-8220
FAX: (714) 966-5256
N-CHANNEL
ENHANCEMENT MODE
POWER MOSFET
DRAIN
SOURCE
GATE
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