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參數(shù)資料
| 型號(hào)： | MSC1000MP |
| 廠商： | STMICROELECTRONICS |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | L BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| 文件頁數(shù)： | 1/5頁 |
| 文件大?。?/td> | 98K |
| 代理商： | MSC1000MP |
October 1992
AVIONICS APPLICATIONS
RF & MICROWAVE TRANSISTORS
.280 4LSL (S053)
epoxy sealed
.
RUGGEDIZED VSWR
∞:1
.
INPUT MATCHING
.
LOW THERMAL RESISTANCE
.
CLASS A OPERATION
.
POUT
= 0.6 W MIN. WITH 10.8 dB GAIN
DESCRIPTION
The MSC1000MP is a Class A, common emitter
transistor with an emitter ballasted Matrix geo-
metry specifically designed for DME/IFF driver ap-
plications.
This device is capable of withstanding a
∞:1 load
VSWR at any phase angle under full rated condi-
tions. Low RF thermal resistance and semi-auto-
matic wire bonding techniques ensure high relia-
bility and product consistency.
The MSC1000MP is housed in the IMPAC
package with internal input matching.
PIN CONNECTION
BRANDING
1000MP
ORDER CODE
MSC1000MP
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C)
Symbol
Parameter
Value
Unit
PDISS
Power Dissipation*
(See Safe Area)
—
W
IC
Device Current*
300
mA
VCE
Collector-Emitter Bias Voltage*
20
V
TJ
Junction Temperature (Pulsed RF Operation)
200
°C
TSTG
Storage Temperature
65 to +150
°C
RTH(j-c)
Junction-Case Thermal Resistance*
35
°C/W
*Applies only to rated RF amplifier operation
MSC1000MP
1. Collector
3. Base
2. Emitter
4. Emitter
THERMAL DATA
1/5
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