- 您現(xiàn)在的位置：買賣IC網 > PDF目錄96084 > MSC1004M (ADVANCED SEMICONDUCTOR INC) L BAND, Si, NPN, RF POWER TRANSISTOR PDF資料下載
參數(shù)資料
| 型號： | MSC1004M |
| 廠商： | ADVANCED SEMICONDUCTOR INC |
| 元件分類： | 功率晶體管 |
| 英文描述： | L BAND, Si, NPN, RF POWER TRANSISTOR |
| 文件頁數(shù)： | 1/1頁 |
| 文件大?。?/td> | 36K |
| 代理商： | MSC1004M |
A D V A N C E D S E M I C O N D U C T O R, I N C.
REV. A
7525 ETHEL AVENUE
NORTH HOLLYWOOD, CA 91605 (818) 982-1200 FAX (818) 765-3004
1/1
Specifications are subject to change without notice.
CHARACTERISTICS TC = 25 OC
SYMBOL
TEST CONDITIONS
MINIMUM TYPICAL MAXIMUM
UNITS
BVCBO
IC = 1.0 mA
45
BVCER
IC = 25 mA
RBE = 10
45
V
BVEBO
IE = 1.0 mA
3.5
V
ICES
VCE = 28 V
1.0
mA
hFE
VCE = 5.0 V
IC = 200 mA
30
300
PG
POUT
ηηηη
VCE = 28 V
PIN = 500 mW
f = 1025 to 1150 MHz
PULSE WIDTH
= 10
S
DUTY CYCLE
= 1.0%
9.0
4.0
35
dB
W
%
NPN SILICON RF MICROWAVE TRANSISTOR
MSC1004M
DESCRIPTION:
The
ASI MSC1004M is low level
Class-C, Common Base Device
Designed for IFF, DME driver
Applications.
FEATURES INCLUDE:
Gold Metalization
Input Matching
Emitter Ballasting
MAXIMUM RATINGS
IC
650 mA
VCC
32 V
PDISS
18 W @ TC
≤ 100 OC
TJ
-65
OC to +200 OC
TSTG
-65
OC to +150 OC
θθθθ
JC
5.0
OC/W
PACKAGE STYLE .250 SQ 2L FL
1 = COLLECTOR
2 = EMITTER
3 = BASE
1
2
3
相關PDF資料 |
PDF描述 |
|---|---|
| MSC1015MP | L BAND, Si, NPN, RF POWER TRANSISTOR |
| MSC1015MP | L BAND, Si, NPN, RF POWER TRANSISTOR |
| MSC1015M | Si, NPN, RF POWER TRANSISTOR |
| MSC1250M | Si, NPN, RF POWER TRANSISTOR |
| MS2553 | L BAND, Si, NPN, RF POWER TRANSISTOR |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| MSC1004MP | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:RF & MICROWAVE TRANSISTORS AVIONICS APPLICATIONS |
| MSC1015M | 制造商:ASI 制造商全稱:ASI 功能描述:NPN SILICON RF POWER TRANSISTOR |
| MSC1015MP | 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:RF AND MICROWAVE TRANSISTORS AVIONICS APPLICATIONS |
| MSC1020 | 制造商:ASI 制造商全稱:ASI 功能描述:NPN SILICON RF POWER TRANSISTOR |
| MSC1035M | 制造商:ASI 制造商全稱:ASI 功能描述:NPN SILICON RF POWER TRANSISTOR |
發(fā)布緊急采購，3分鐘左右您將得到回復。