- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄96084 > MSAFA1N100P3L (MICROSEMI CORP) 1 A, 1000 V, 14 ohm, N-CHANNEL, Si, POWER, MOSFET PDF資料下載
參數(shù)資料
| 型號： | MSAFA1N100P3L |
| 廠商： | MICROSEMI CORP |
| 元件分類： | JFETs |
| 英文描述： | 1 A, 1000 V, 14 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 文件頁數(shù)： | 1/2頁 |
| 文件大小： | 44K |
| 代理商： | MSAFA1N100P3L |
www.MICROSEMI.com
Santa Ana Division
Data Sheet # MSC
Updated: December 1999
2830 south Fairview Street, Santa Ana, CA 92704 USA (714)979.8220 FAX (714)557.5989
MSAFA1N100P3
Maximum Ratings
Features
Low On-State resistance
Avalanche and Surge Rated
High Frequency Switching
Ultra low Leakage Current
UIS rated
Available with Lot Acceptance Testing “L” Suffix
Available with “J” leads
Applications
Implantable Cardio Defibrillator
MOSFET Device
1 Amp
1000 V
N-Channel
enhancement mode high
density
Static Electrical Characteristics
SYMBOL
PARAMETER
VALUE
UNIT
VDSS
Drain - Source Voltage
1000
Volts
VGS
Gate - Source Voltage
±20
Volts
ID1
Continuous Drain Current @ TC = 25
1
Amps
ID2
Continuous Drain Current @ TC = 100
0.8
Amps
IDM1
Pulsed Drain Current
4
Amps
IAR
Avalanche Current
1
Amps
EAR
Repetitive Avalanche Energy
TBD
mJ
EAS
Single Pulse Avalanche Energy
TBD
mJ
TJ, TSTG
Operating and Storage: Junction Temperature Range
-55 to 150
C
SYMBOL
CHARACTERISTIC / TEST CONDITIONS
MIN
TYP
MAX UNIT
BVDSS
Drain - Source Breakdown Voltage (VGS = 0V, ID = 0.25mA)
1000
Volts
VGS(TH)2
Gate Threshold Voltage (VGS= VDS, ID = 1 mA, TJ = 37C)
3.4
Volts
VGS(TH)1
Gate Threshold Voltage (VGS= VDS, ID = 1 mA, TJ = 25C)
2
3.5
4.5
Volts
RDS(ON)1
Drain – Source On-State Resistance (VGS = 10V, ID = ID1, TJ = 25C)
12.5
13.5
ohm
RDS(ON)2
Drain – Source On-State Resistance (VGS = 7V, ID = 5…150 mA, TJ= 37C)
12.5
ohm
RDS(ON)3
Drain – Source On-State Resistance (VGS = 7V, ID = 5…150 mA, TJ= 25C)
11.5
14
ohm
RDS(ON)4
Drain – Source On-State Resistance (VGS = 7V, ID = 5…150 mA, TJ= 60C)
15
ohm
RDS(ON)5
Drain – Source On-State Resistance (VGS = 7V, ID = ID1, TJ = 125C)
23.5
ohm
IDSS1
Zero Gate Voltage Drain Current (VDS = 80%BVDSS, VGS = 0V, TJ = 25C)
10
uA
IDSS2
Zero Gate Voltage Drain Current (VDS = 80%BVDSS, VGS = 0V, TJ = 37C)
1
uA
IDSS3
Zero Gate Voltage Drain Current (VDS = 80%BVDSS, VGS = 0V, TJ = 125C)
100
uA
IGSS1
Gate-Source Leakage Current (VGS = ±20V, VCE =0V)
±100
nA
IGSS2
Gate-Source Leakage Current (VGS= ±20V VCE =0V), Tj= 37C
10
nA
IGSS3
Gate-Source Leakage Current (VGS= ±20V VCE =0V), Tj= 125C
500
nA
Testing and Screening (per lot)
100% Testing at 25C, DC parameters
Sample Test (22/0), AC, Hot and Cold Parameters (min/max limits)
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| MSAFI30N20A | Si, N-CHANNEL, RF POWER, MOSFET |
| MSAEI30N20A | Si, N-CHANNEL, RF POWER, MOSFET |
| MSASC25W100KRV | 25 A, 100 V, SILICON, RECTIFIER DIODE |
| MSASC25W100KRS | 25 A, 100 V, SILICON, RECTIFIER DIODE |
| MSB709-RT3 | 100 mA, 25 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MSAFA75N10C | 制造商:Microsemi Corporation 功能描述:TRANS MOSFET N-CH 100V 75A 3PIN COOLPACK2 - Bulk |
| MSAFR12N50A | 制造商:Microsemi Corporation 功能描述:TRANS MOSFET N-CH 500V 12A 3PIN COOLPACK1 - Bulk |
| MSAFR30N20A | 制造商:Microsemi Corporation 功能描述:TRANS MOSFET N-CH 200V 30A 3PIN COOLPACK1 - Bulk |
| MSAFR38N10A | 制造商:Microsemi Corporation 功能描述:TRANS MOSFET N-CH 100V 38A 3PIN COOLPACK1 - Bulk |
| MSAFX10N100A | 制造商:Microsemi Corporation 功能描述:TRANS MOSFET N-CH 10A 3PIN COOLPACK1 - Bulk |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。