參數(shù)資料
型號(hào): MS2441
元件分類: 功率晶體管
英文描述: L BAND, Si, NPN, RF POWER TRANSISTOR
封裝: 0.400 X 0.500 INCH, HERMETIC SEALED, M112, 2 PIN
文件頁數(shù): 1/6頁
文件大?。?/td> 182K
代理商: MS2441
MS2441
Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein
Visit our website at WWW.ADVANCEDPOWER.COM or contact our factory direct.
DESCRIPTION:
The MS2441 is a silicon NPN power transistor designed
for high peak power and low duty cycles applications such as
DME and IFF. The MS2441 utilizes internal input/output
impedance matching, resulting in improved broadband
performance and a low thermal resistance.
ABSOLUTE MAXIMUM RATINGS
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°°C)
Symbol
Parameter
Value
Unit
VCBO
Collector-Base Voltage
65
V
VCES
Collector-Emitter Voltage
65
V
VEBO
Emitter-Base Voltage
3.5
V
IC
Device Current
22
A
PDISS
Power Dissipation
1458
W
TJ
Junction Temperature
+200
°°C
TSTG
Storage Temperature
-65 to +150
°°C
Thermal Data
RTH(J-C)
Junction-case Thermal Resistance
0.12
°°C/W
Features
DESIGNED FOR HIGH POWER PULSED IFF AND DME
APPLICATIONS
400 W (min.) DME 1025 – 1150 MHz
1025 – 1150 MHz
50 VOLTS
P
OUT = 400 WATTS
G
P = 6.5 dB MINIMUM
20:1 VSWR CAPABILITY
INPUT/OUTPUT MATCHING
COMMON BASE CONFIGURATION
140 COMMERCE DRIVE
MONTGOMERYVILLE, PA
18936-1013
PHONE: (215) 631-9840
FAX: (215) 631-9855
RF & MICROWAVE TRANSISTORS
L-BAND AVIONICS APPLICATIONS
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