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參數(shù)資料
| 型號： | MS2607 |
| 元件分類： | 功率晶體管 |
| 英文描述： | S BAND, Si, NPN, RF POWER TRANSISTOR |
| 封裝： | HERMETIC SEALED, M216, 4 PIN |
| 文件頁數(shù)： | 1/3頁 |
| 文件大小： | 100K |
| 代理商： | MS2607 |
12-05-2002
MS2607
RF & MICROWAVE TRANSISTORS
S BAND RADAR APPLICATIONS
ABSOLUTE MAXIMUM RATINGS
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°°°°C)
PDISS
Power Dissipation
500
W
IC
Device Current
16
A
VCC
Collector Supply Voltage
45
V
TJ
Junction Temperature
200
°°°°C
TSTG
Storage Temperature
-65 to +200
°°°°C
Thermal Data
RTH(J-C)
Junction - Case Thermal Resistance*
0.35
°°°°C/W
Features
2.7- 2.9 GHz
40 VOLTS
POUT = 125 WATTS
GP = 7.0 dB MINIMUM
INPUT/OUTPUT MATCHING
GOLD METALLIZATION
COMMON BASE CONFIGURATION
DESCRIPTION:
The MS2607 is a silicon NPN bipolar transistor specifically
designed for medium pulse S-Band radar applications. This
device is capable of operation over a wide range of pulse
widths, duty cycles and temperatures.
Gold metalized, intredigitated die geometry provides
superior ruggedness into a 3:1 VSWR at + 1 dB overdrive.
Internal impedance matching and computerized wirebond
insure superior product consistency.
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