參數(shù)資料
型號(hào): MS2604
元件分類(lèi): 功率晶體管
英文描述: S BAND, Si, NPN, RF POWER TRANSISTOR
封裝: 0.400 X 0.400 INCH, HERMETIC SEALED, M214, 4 PIN
文件頁(yè)數(shù): 1/3頁(yè)
文件大?。?/td> 119K
代理商: MS2604
12-05-2002
MS2604
RF& MICROWAVE TRANSISTORS
S BAND RADAR APPLICATIONS
ABSOLUTE MAXIMUM RATINGS
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°°°°C)
Symbol
Parameter
Value
Unit
VCC
Collector Supply Voltage
46
V
IC
Device Current
4
A
PDISS
Power Dissipation
100
W
TJ
Junction Temperature
200
°°°°C
TSTG
Storage Temperature
-65 to +200
°°°°C
Thermal Data
RTH(J-C)
Junction - Case Thermal Resistance
2.0
°°°°C/W
Features
2.7 – 3.1 GHz
40 VOLTS
POUT = 25 WATTS
GP = 6.2 dB MINIMUM
GOLD METALLIZATION
INPUT/OUTPUT MATCHING
COMMON BASE CONFIGURATION
DESCRIPTION:
The MS2604 is a silicon NPN bipolar transistor designed
for pulsed S-Band radar applications.
The MS2604 is capable of operation over a wide range of
pulse widths and duty cycles. Internal impedance
matching and gold metalization provide consistent
broadband performance and long term reliability.
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