參數(shù)資料
型號(hào): MS2472
元件分類: 功率晶體管
英文描述: L BAND, Si, NPN, RF POWER TRANSISTOR
封裝: 0.400 X 0.500 INCH, HERMETIC SEALED, M112, 2 PIN
文件頁數(shù): 1/4頁
文件大小: 137K
代理商: MS2472
Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein
Visit our website at WWW.ADVANCEDPOWER.COM or contact our factory direct.
MS2472
RF & MICROWAVE TRANSISTORS
AVIONICS APPLICATIONS
DESCRIPTION:
The MS2472 is a hermetically sealed, gold metallized, silicon
NPN power transistor. The MS2472 is designed for applications
requiring high peak power and low duty cycles such as IFF and DME.
The MS2472 is internal input/output matched resulting in improved
broadband performance and a low thermal resistance.
ABSOLUTE MAXIMUM RATINGS
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°°C)
Symbol
Parameter
Value
Unit
VCBO
Collector-Base Voltage
65
V
VCES
Collector-Emitter Voltage
65
V
VEBO
Emitter-Base Voltage
3.5
V
IC
Device Current
40
A
PDISS
Power Dissipation
1350
W
TJ
Junction Temperature
200
C
TSTG
Storage Temperature
-65 to +150
C
Thermal Data
RTH(J-C)
Thermal Resistance Junction-case
0.06
°°C/W
Features
DESIGNED FOR HIGH POWER PULSED IFF AND DME
APPLICATIONS
600 W (typ.) IFF 1030 – 1090 MHz
550 W (min.) DME 1025 – 1150 MHz
1025 - 1150 MHz
P
OUT = 550 WATTS
G
P = 5.6 dB MINIMUM
GOLD METALLIZATION
INTERNAL INPUT/OUTPUT MATCHED
COMMON BASE CONFIGURATION
140 COMMERCE DRIVE
MONTGOMERYVILLE, PA
18936-1013
PHONE: (215) 631-9840
FAX: (215) 631-9855
相關(guān)PDF資料
PDF描述
MS2575 L BAND, Si, NPN, RF POWER TRANSISTOR
MS2602 S BAND, Si, NPN, RF POWER TRANSISTOR
MS2604 S BAND, Si, NPN, RF POWER TRANSISTOR
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MS2613 S BAND, Si, NPN, RF POWER TRANSISTOR
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