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參數(shù)資料
| 型號： | MRFE6S9135HSR3 |
| 廠商： | FREESCALE SEMICONDUCTOR INC |
| 元件分類： | 功率晶體管 |
| 英文描述： | UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 封裝： | ROHS COMPLIANT, NI-880S, CASE 465C-02, 2 PIN |
| 文件頁數(shù)： | 9/12頁 |
| 文件大?。?/td> | 442K |
| 代理商： | MRFE6S9135HSR3 |
6
RF Device Data
Freescale Semiconductor
MRFE6S9135HR3 MRFE6S9135HSR3
TYPICAL CHARACTERISTICS
G
ps
,POWER
GAIN
(dB)
IRL,
INPUT
RETURN
LOSS
(dB)
P
ARC
(dBc)
20
0
5
10
15
980
860
IRL
Gps
PARC
f, FREQUENCY (MHz)
Figure 3. Single-Carrier W-CDMA Broadband Performance
@ Pout = 39 Watts Avg.
960
940
920
900
880
14
22
21
20
19
18
17
16
15
1.5
33
32
31
30
0.3
0.6
0.9
1.2
η
D
,DRAIN
EFFICIENCY
(%)
ηD
G
ps
,POWER
GAIN
(dB)
IRL,
INPUT
RETURN
LOSS
(dB)
P
ARC
(dBc)
20
0
5
10
15
980
860
IRL
Gps
PARC
f, FREQUENCY (MHz)
Figure 4. Single-Carrier W-CDMA Broadband Performance
@ Pout = 80 Watts Avg.
960
940
920
900
880
14
21
20
19
18
17
16
15
3.2
46
45
44
43
2.4
2.6
2.8
3
η
D
,DRAIN
EFFICIENCY
(%)
ηD
Figure 5. Two-Tone Power Gain versus
Output Power
100
17
1
IDQ = 1500 mA
1250 mA
Pout, OUTPUT POWER (WATTS) PEP
750 mA
22
21
20
10
400
G
ps
,POWER
GAIN
(dB)
Figure 6. Third Order Intermodulation Distortion
versus Output Power
1
IDQ = 500 mA
Pout, OUTPUT POWER (WATTS) PEP
750 mA
1000 mA
100
10
20
30
40
400
60
50
10
INTERMODULA
TION
DIST
OR
TION
(dBc)
IMD,
THIRD
ORDER
VDD = 28 Vdc, Pout = 80 W (Avg.)
IDQ = 1000 mA, SingleCarrier WCDMA
3.84 MHz Channel Bandwidth, Input Signal
PAR = 7.5 dB @ 0.01% Probability (CCDF)
19
18
VDD = 28 Vdc, Pout = 39 W (Avg.)
IDQ = 1000 mA, SingleCarrier WCDMA
3.84 MHz Channel Bandwidth, Input Signal
PAR = 7.5 dB @ 0.01% Probability (CCDF)
1000 mA
500 mA
VDD = 28 Vdc, f1 = 935 MHz, f2 = 945 MHz
TwoTone Measurements
1250 mA
1500 mA
VDD = 28 Vdc, f1 = 935 MHz, f2 = 945 MHz
TwoTone Measurements
1000
1020
1000
1020
13
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MRFE6S9135HSR5 | 功能描述:射頻MOSFET電源晶體管 HV6E 900MHZ 135W NI880S RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| MRFE6S9160HR3 | 功能描述:射頻MOSFET電源晶體管 HV6E 900MHZ 160W NI780H RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| MRFE6S9160HR5 | 功能描述:射頻MOSFET電源晶體管 HV6E 900MHZ 160W NI780H RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| MRFE6S9160HSR3 | 功能描述:射頻MOSFET電源晶體管 HV6E 900MHZ 160W NI780HS RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| MRFE6S9160HSR5 | 功能描述:射頻MOSFET電源晶體管 HV6E 900MHZ 160W NI780HS RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
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