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參數(shù)資料
| 型號： | MRFE6S9135HSR3 |
| 廠商： | FREESCALE SEMICONDUCTOR INC |
| 元件分類： | 功率晶體管 |
| 英文描述： | UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 封裝： | ROHS COMPLIANT, NI-880S, CASE 465C-02, 2 PIN |
| 文件頁數(shù)： | 10/12頁 |
| 文件大?。?/td> | 442K |
| 代理商： | MRFE6S9135HSR3 |
MRFE6S9135HR3 MRFE6S9135HSR3
7
RF Device Data
Freescale Semiconductor
TYPICAL CHARACTERISTICS
Figure 7. Intermodulation Distortion Products
versus Output Power
Pout, OUTPUT POWER (WATTS) PEP
IMD,
INTERMODULA
TION
DIST
OR
TION
(dBc)
70
10
1
100
40
50
10
30
20
60
7th Order
VDD = 28 Vdc, IDQ = 1000 mA, f1 = 935 MHz
f2 = 945 MHz, TwoTone Measurements
5th Order
3rd Order
400
Figure 8. Intermodulation Distortion Products
versus Tone Spacing
TWOTONE SPACING (MHz)
10
60
IM3U
10
30
1
100
IMD,
INTERMODULA
TION
DIST
OR
TION
(dBc)
40
20
IM5U
IM5L
IM7L
0
Figure 9. Output Peak-to-Average Ratio
Compression (PARC) versus Output Power
1
Pout, OUTPUT POWER (WATTS)
1
3
5
30
Actual
Ideal
0
2
4
OUTPUT
COMPRESSION
A
T
THE
0.01%
PROBABILITY
ON
CCDF
(dB)
20
40
50
100
25
55
50
45
40
35
30
η
D,
DRAIN
EFFICIENCY
(%)
1 dB = 38.71 W
70
60
80
2 dB = 54.21 W
3 dB = 85.92 W
300
16
0
Pout, OUTPUT POWER (WATTS) CW
Figure 10. Power Gain and Drain Efficiency
versus CW Output Power
VDD = 28 Vdc
IDQ = 1000 mA
f = 940 MHz
TC = 30_C
25
_C
85
_C
10
23
22
21
20
19
50
40
30
20
10
η
D,
DRAIN
EFFICIENCY
(%)
Gps
ηD
G
ps
,POWER
GAIN
(dB)
100
30
_C
25
_C
85
_C
18
17
1
60
70
50
VDD = 28 Vdc, Pout = 160 W (PEP)
IDQ = 1000 mA, TwoTone Measurements
(f1 + f2)/2 = Center Frequency of 940 MHz
IM7U
IM3L
90
Figure 11. Power Gain versus Output Power
Pout, OUTPUT POWER (WATTS) CW
G
ps
,POWER
GAIN
(dB)
28 V
IDQ = 1000 mA
f = 940 MHz
VDD = 24 V
32 V
17
22
020
19
20
21
18
40
60
80 100 120 140 160 180 200 220 240
SingleCarrier WCDMA, 3.84 MHz Channel Bandwidth
VDD = 28 Vdc, IDQ = 1000 mA, f = 940 MHz
Input Signal PAR = 7.5 dB @ 0.01% Probability (CCDF)
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MRFE6S9135HSR5 | 功能描述:射頻MOSFET電源晶體管 HV6E 900MHZ 135W NI880S RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| MRFE6S9160HR3 | 功能描述:射頻MOSFET電源晶體管 HV6E 900MHZ 160W NI780H RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| MRFE6S9160HR5 | 功能描述:射頻MOSFET電源晶體管 HV6E 900MHZ 160W NI780H RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| MRFE6S9160HSR3 | 功能描述:射頻MOSFET電源晶體管 HV6E 900MHZ 160W NI780HS RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| MRFE6S9160HSR5 | 功能描述:射頻MOSFET電源晶體管 HV6E 900MHZ 160W NI780HS RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
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