- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄98043 > MRFE6S9135HSR3 (FREESCALE SEMICONDUCTOR INC) UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET PDF資料下載
參數(shù)資料
| 型號： | MRFE6S9135HSR3 |
| 廠商： | FREESCALE SEMICONDUCTOR INC |
| 元件分類： | 功率晶體管 |
| 英文描述： | UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 封裝： | ROHS COMPLIANT, NI-880S, CASE 465C-02, 2 PIN |
| 文件頁數(shù)： | 6/12頁 |
| 文件大小： | 442K |
| 代理商： | MRFE6S9135HSR3 |
MRFE6S9135HR3 MRFE6S9135HSR3
3
RF Device Data
Freescale Semiconductor
Table 4. Electrical Characteristics (TC = 25°C unless otherwise noted) (continued)
Characteristic
Symbol
Min
Typ
Max
Unit
Typical Performances (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 1000 mA, 920-960 MHz Bandwidth
Video Bandwidth @ 160 W PEP Pout where IM3 = -30 dBc
(Tone Spacing from 100 kHz to VBW)
ΔIMD3 = IMD3 @ VBW frequency - IMD3 @ 100 kHz <1 dBc (both
sidebands)
VBW
—
10
—
MHz
Gain Flatness in 40 MHz Bandwidth @ Pout = 39 W Avg.
GF
—
0.3
—
dB
Average Deviation from Linear Phase in 40 MHz Bandwidth
@ Pout = 135 W CW
Φ
—
1
—
°
Average Group Delay @ Pout = 135 W CW, f = 940 MHz
Delay
—
3.6
—
ns
Part-to-Part Insertion Phase Variation @ Pout = 135 W CW,
f = 940 MHz, Six Sigma Window
ΔΦ
—
19
—
°
Gain Variation over Temperature
(-30°C to +85°C)
ΔG
—
0.015
—
dB/°C
Output Power Variation over Temperature
(-30°C to +85°C)
ΔP1dB
—
0.01
—
dBm/°C
相關PDF資料 |
PDF描述 |
|---|---|
| MRFE6S9160HR3 | UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| MRFE6S9160HSR3 | UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| MRFE6S9200HR3 | UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| MRFE6S9201HSR3 | UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| MRFE6S9201HR3 | UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| MRFE6S9135HSR5 | 功能描述:射頻MOSFET電源晶體管 HV6E 900MHZ 135W NI880S RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| MRFE6S9160HR3 | 功能描述:射頻MOSFET電源晶體管 HV6E 900MHZ 160W NI780H RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| MRFE6S9160HR5 | 功能描述:射頻MOSFET電源晶體管 HV6E 900MHZ 160W NI780H RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| MRFE6S9160HSR3 | 功能描述:射頻MOSFET電源晶體管 HV6E 900MHZ 160W NI780HS RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| MRFE6S9160HSR5 | 功能描述:射頻MOSFET電源晶體管 HV6E 900MHZ 160W NI780HS RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
發(fā)布緊急采購，3分鐘左右您將得到回復。