參數(shù)資料
型號： MRFE6S9046NR1
廠商： FREESCALE SEMICONDUCTOR INC
元件分類： 功率晶體管
英文描述： UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET
封裝： ROHS COMPLIANT, PLASTIC, TO-270, CASE 1486-03, WB, 4 PIN
文件頁數(shù)： 16/21頁
文件大?。?/td> 630K
代理商： MRFE6S9046NR1
4
RF Device Data
Freescale Semiconductor
MRFE6S9046NR1 MRFE6S9046GNR1
Figure 2. MRFE6S9046NR1(GNR1) Test Circuit Schematic — GSM EDGE Reference Design
Z10
0.040″ x 0.450″ Microstrip
Z11
0.321″ x 0.450″ Microstrip
Z12
0.080″ x 0.280″ Microstrip
Z13
0.372″ x 0.044″ Microstrip
Z14
0.124″ x 0.044″ Microstrip
Z15
0.200″ x 0.044″ Microstrip
PCB
Rogers R04350, 0.020″, εr = 3.66
* Line length includes microstrip bends
Z1
0.200″ x 0.044″ Microstrip
Z2
0.196″ x 0.044″ Microstrip
Z3
0.380″ x 0.044″ Microstrip
Z4
0.321″ x 0.450″ Microstrip
Z5
0.039″ x 0.450″ Microstrip
Z6*
0.281″ x 0.040″ Microstrip
Z7
0.892″ x 0.051″ Microstrip
Z8* Z9*
0.751″ x 0.040″ Microstrip
VBIAS
VSUPPLY
RF
OUTPUT
RF
INPUT
DUT
C5
C10
R1
Z1
Z2
Z3
Z5
C1
C9
Z10
Z6
Z11
Z15
Z9
C2
C3
C4
Z7
Z8
C13
Z12
C7
C6
Z13
C8
Z14
Z4
C14
C12
+
C11
Table 6. MRFE6S9046NR1(GNR1) Test Circuit Component Designations and Values — GSM EDGE Reference Design
Part
Description
Part Number
Manufacturer
C1, C9
56 pF Chip Capacitors
ATC600F560BT500XT
ATC
C2
2.4 pF Chip Capacitor
ATC600F2R4BT500XT
ATC
C3, C4
6.8 pF Chip Capacitors
ATC600F6R8BT500XT
ATC
C5, C11, C14
10 μF, 50 V Chip Capacitors
GRM55DR61H106KA88B
Murata
C6, C7
3.3 pF Chip Capacitors
ATC600F3R3BT500XT
ATC
C8
4.7 pF Chip Capacitor
ATC600F4R7BT500XT
ATC
C10, C13
39 pF Chip Capacitors
ATC600F390BT500XT
ATC
C12
470 μF, 63 V Electrolytic Capacitor
MCGPR63V477M13X26 -RH
Multicomp
R1
4.7 KΩ, 1/4 W Chip Resistor
CRCW12064701FKEA
Vishay
相關PDF資料
PDF描述
MRFE6S9060NR1 UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET, TO-270AA
MRFE6S9125NBR1 UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET, TO-272
MRFE6S9125NR1 UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET, TO-270
MRFE6S9130HSR3 UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET
MRFE6S9130HR3 UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET
相關代理商/技術參數(shù)
參數(shù)描述
MRFE6S9060GNR1 功能描述:射頻MOSFET電源晶體管 HV6E 60W TO 270-2GN FET RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray
MRFE6S9060NR1 功能描述:射頻MOSFET電源晶體管 HV6E 60W TO270-2N FET RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray
MRFE6S9060NR1-CUT TAPE 制造商:Freescale 功能描述:MRFE6S9060 Series 880 MHz 14 W 28 V N-Channel RF Power MOSFET
MRFE6S9125NBR1 功能描述:射頻MOSFET電源晶體管 HV6E 125W RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray
MRFE6S9125NR1 功能描述:射頻MOSFET電源晶體管 HV6E 125W RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray
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