參數(shù)資料
型號： MRFE6S9046NR1
廠商： FREESCALE SEMICONDUCTOR INC
元件分類： 功率晶體管
英文描述： UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET
封裝： ROHS COMPLIANT, PLASTIC, TO-270, CASE 1486-03, WB, 4 PIN
文件頁數(shù)： 12/21頁
文件大?。?/td> 630K
代理商： MRFE6S9046NR1
2
RF Device Data
Freescale Semiconductor
MRFE6S9046NR1 MRFE6S9046GNR1
Table 2. Thermal Characteristics
Characteristic
Symbol
Value (1,2)
Unit
Thermal Resistance, Junction to Case
Case Temperature 80°C, 45 W CW, 28 Vdc, IDQ = 300 mA
Case Temperature 80°C, 18 W CW, 28 Vdc, IDQ = 300 mA
RθJC
1.3
1.8
°C/W
Table 3. ESD Protection Characteristics
Test Methodology
Class
Human Body Model (per JESD22-A114)
1C (Minimum)
Machine Model (per EIA/JESD22-A115)
A (Minimum)
Charge Device Model (per JESD22-C101)
III (Minimum)
Table 4. Moisture Sensitivity Level
Test Methodology
Rating
Package Peak Temperature
Unit
Per JESD22-A113, IPC/JEDEC J-STD-020
3
260
°C
Table 5. Electrical Characteristics (TC = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
Off Characteristics
Zero Gate Voltage Drain Leakage Current
(VDS = 66 Vdc, VGS = 0 Vdc)
IDSS
—
10
μAdc
Zero Gate Voltage Drain Leakage Current
(VDS = 28 Vdc, VGS = 0 Vdc)
IDSS
—
1
μAdc
Gate-Source Leakage Current
(VGS = 5 Vdc, VDS = 0 Vdc)
IGSS
—
1
μAdc
On Characteristics
Gate Threshold Voltage
(VDS = 10 Vdc, ID = 100 μAdc)
VGS(th)
1
2.2
3
Vdc
Gate Quiescent Voltage
(VDD = 28 Vdc, ID = 300 mAdc, Measured in Functional Test)
VGS(Q)
2
3.1
4
Vdc
Drain-Source On-Voltage
(VGS = 10 Vdc, ID = 1 Adc)
VDS(on)
0.1
0.3
0.4
Vdc
Dynamic Characteristics (3)
Reverse Transfer Capacitance
(VDS = 28 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc)
Crss
—
0.6
—
pF
Output Capacitance
(VDS = 28 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc)
Coss
—
318
—
pF
Input Capacitance
(VDS = 28 Vdc, VGS = 0 Vdc ± 30 mV(rms)ac @ 1 MHz)
Ciss
—
120
—
pF
Functional Tests (4) (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, Pout = 35.5 W CW, IDQ = 300 mA, f = 960 MHz
Characteristic
Symbol
Min
Typ
Max
Unit
Power Gain
Gps
17.5
19
—
dB
Drain Efficiency
ηD
54
57
—
%
Input Return Loss
IRL
—
-13
-7
dB
1. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
2. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes - AN1955.
3. Part internally matched both on input and output.
4. Measurement made with device in straight lead configuration before any lead forming operation is applied.
(continued)
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相關代理商/技術參數(shù)
參數(shù)描述
MRFE6S9060GNR1 功能描述:射頻MOSFET電源晶體管 HV6E 60W TO 270-2GN FET RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray
MRFE6S9060NR1 功能描述:射頻MOSFET電源晶體管 HV6E 60W TO270-2N FET RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray
MRFE6S9060NR1-CUT TAPE 制造商:Freescale 功能描述:MRFE6S9060 Series 880 MHz 14 W 28 V N-Channel RF Power MOSFET
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MRFE6S9125NR1 功能描述:射頻MOSFET電源晶體管 HV6E 125W RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray
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