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參數(shù)資料
| 型號(hào)： | MRFE6S9046NR1 |
| 廠(chǎng)商： | FREESCALE SEMICONDUCTOR INC |
| 元件分類(lèi)： | 功率晶體管 |
| 英文描述： | UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 封裝： | ROHS COMPLIANT, PLASTIC, TO-270, CASE 1486-03, WB, 4 PIN |
| 文件頁(yè)數(shù)： | 15/21頁(yè) |
| 文件大?。?/td> | 630K |
| 代理商： | MRFE6S9046NR1 |
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MRFE6S9046NR1 MRFE6S9046GNR1
3
RF Device Data
Freescale Semiconductor
Table 5. Electrical Characteristics (TC = 25°C unless otherwise noted) (continued)
Characteristic
Symbol
Min
Typ
Max
Unit
Typical Performances (In Freescale GSM EDGE Reference Design Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 300 mA, 920-960 MHz
Bandwidth
Pout @ 1 dB Compression Point
P1dB
—
45
—
W
IMD Symmetry @ 44 W PEP, Pout where IMD Third Order
Intermodulation
` 30 dBc
(Delta IMD Third Order Intermodulation between Upper and Lower
Sidebands > 2 dB)
IMDsym
—
55
—
MHz
VBW Resonance Point
(IMD Third Order Intermodulation Inflection Point)
VBWres
—
65
—
MHz
Gain Flatness in 40 MHz Bandwidth @ Pout = 35.5 W CW
GF
—
0.2
—
dB
Average Deviation from Linear Phase in 40 MHz Bandwidth
@ Pout = 45 W CW
Φ
—
0.9
—
°
Average Group Delay @ Pout = 45 W CW, f = 940 MHz
Delay
—
3.1
—
ns
Part-to-Part Insertion Phase Variation @ Pout = 45 W CW,
f = 940 MHz, Six Sigma Window
ΔΦ
—
20
—
°
Gain Variation over Temperature
(-30°C to +85°C)
ΔG
—
0.021
—
dB/°C
Output Power Variation over Temperature
(-30°C to +85°C)
ΔP1dB
—
0.006
—
dBm/°C
Typical GSM EDGE Performances (In Freescale GSM EDGE Reference Design Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 285 mA,
Pout = 17.8 W Avg., 920-960 MHz EDGE Modulation
Power Gain
Gps
—
19
—
dB
Drain Efficiency
ηD
—
42.5
—
%
Error Vector Magnitude
EVM
—
2.1
—
% rms
Spectral Regrowth at 400 kHz Offset
SR1
—
-62.5
—
dBc
Spectral Regrowth at 600 kHz Offset
SR2
—
-72
—
dBc
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| MRFE6S9060GNR1 | 功能描述:射頻MOSFET電源晶體管 HV6E 60W TO 270-2GN FET RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| MRFE6S9060NR1 | 功能描述:射頻MOSFET電源晶體管 HV6E 60W TO270-2N FET RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| MRFE6S9060NR1-CUT TAPE | 制造商:Freescale 功能描述:MRFE6S9060 Series 880 MHz 14 W 28 V N-Channel RF Power MOSFET |
| MRFE6S9125NBR1 | 功能描述:射頻MOSFET電源晶體管 HV6E 125W RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| MRFE6S9125NR1 | 功能描述:射頻MOSFET電源晶體管 HV6E 125W RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
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