參數(shù)資料
型號: MRFE6P9220HR3
廠商: FREESCALE SEMICONDUCTOR INC
元件分類: 功率晶體管
英文描述: 2 CHANNEL, UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET
封裝: ROHS COMPLIANT, NI-860C3, CASE 375G-04, 4 PIN
文件頁數(shù): 8/12頁
文件大?。?/td> 403K
代理商: MRFE6P9220HR3
MRFE6P9220HR3
5
Freescale Semiconductor
RF Product Device Data
Figure 2. MRF6P9220HR3 Test Circuit Component Layout
MRF6P9220,
Rev
.1
VGG
VDD
VGG
COAX3
COAX4
COAX1
COAX2
C1
C23
B1
R1
R3
C2
C3
C4
C5
C6
C7
C8
B2
R2
C15
C18
C17
C16
C11
C10
C13
C12
C14
C24
C19
C22
C21
C20
CUT
OUT
AREA
C9
相關(guān)PDF資料
PDF描述
MRFE6S8046NR1 UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET, TO-270
MRFE6S8046GNR1 UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET, TO-270BB
MRFE6S9045NR1 UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET, TO-270
MRFE6S9046NR1 UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET
MRFE6S9060NR1 UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET, TO-270AA
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
MRFE6P9220HR5 功能描述:射頻MOSFET電源晶體管 HV6E 900MHZ 200W NI860ML RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray
MRFE6S8046GNR1 功能描述:射頻MOSFET電源晶體管 HV6E 45W GSM RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray
MRFE6S8046NR1 功能描述:射頻MOSFET電源晶體管 HV6E 45W GSM RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray
MRFE6S9045GNR1 功能描述:射頻MOSFET電源晶體管 HV6E 900MHZ 45W TO270-2G RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray
MRFE6S9045N 制造商:Freescale Semiconductor 功能描述: