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參數(shù)資料
| 型號(hào)： | MRFE6P9220HR3 |
| 廠商： | FREESCALE SEMICONDUCTOR INC |
| 元件分類： | 功率晶體管 |
| 英文描述： | 2 CHANNEL, UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 封裝： | ROHS COMPLIANT, NI-860C3, CASE 375G-04, 4 PIN |
| 文件頁(yè)數(shù)： | 5/12頁(yè) |
| 文件大?。?/td> | 403K |
| 代理商： | MRFE6P9220HR3 |
2
Freescale Semiconductor
RF Product Device Data
MRFE6P9220HR3
Table 3. ESD Protection Characteristics
Test Methodology
Class
Human Body Model (per JESD22-A114)
3B (Minimum)
Machine Model (per EIA/JESD22-A115)
C (Minimum)
Charge Device Model (per JESD22-C101)
IV (Minimum)
Table 4. Electrical Characteristics (TC = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
Off Characteristics
Zero Gate Voltage Drain Leakage Current (4)
(VDS = 66 Vdc, VGS = 0 Vdc)
IDSS
—
10
μAdc
Zero Gate Voltage Drain Leakage Current (4)
(VDS = 28 Vdc, VGS = 0 Vdc)
IDSS
—
1
μAdc
Gate-Source Leakage Current (1)
(VGS = 5 Vdc, VDS = 0 Vdc)
IGSS
—
1
μAdc
On Characteristics
Gate Threshold Voltage (1)
(VDS = 10 Vdc, ID = 240 μAdc)
VGS(th)
1.5
2.2
3
Vdc
Gate Quiescent Voltage (3)
(VDD = 28 Vdc, ID = 1600 mAdc, Measured in Functional Test)
VGS(Q)
2.3
3
3.8
Vdc
Drain-Source On-Voltage (1)
(VGS = 10 Vdc, ID = 2.4 Adc)
VDS(on)
0.1
0.22
0.3
Vdc
Dynamic Characteristics (2)
Reverse Transfer Capacitance (4)
(VDS = 28 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc)
Crss
—
1.22
—
pF
Output Capacitance (4)
(VDS = 28 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc)
Coss
—
217
—
pF
Input Capacitance
(VDS = 28 Vdc, VGS = 0 Vdc ± 30 mV(rms)ac @ 1 MHz)
Ciss
—
1060
—
pF
Functional Tests (3) (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 1600 mA, Pout = 47 W Avg. N-CDMA, f = 880 MHz,
Single-Carrier N-CDMA, 1.2288 MHz Channel Bandwidth Carrier. ACPR measured in 30 kHz Channel Bandwidth @ ±750 kHz Offset.
PAR = 9.8 dB @ 0.01% Probability on CCDF.
Power Gain
Gps
18.5
20
23
dB
Drain Efficiency
ηD
28
30
—
%
Adjacent Channel Power Ratio
ACPR
—
-46
-44.5
dBc
Input Return Loss
IRL
—
-14
-9
dB
1. Each side of the device measured separately.
2. Part internally matched both on input and output.
3. Measurement made with device in push-pull configuration.
4. Drains are tied together internally as this is a total device value.
(continued)
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| MRFE6P9220HR5 | 功能描述:射頻MOSFET電源晶體管 HV6E 900MHZ 200W NI860ML RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
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| MRFE6S9045N | 制造商:Freescale Semiconductor 功能描述: |
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