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參數(shù)資料
| 型號： | MRFE6P9220HR3 |
| 廠商： | FREESCALE SEMICONDUCTOR INC |
| 元件分類： | 功率晶體管 |
| 英文描述： | 2 CHANNEL, UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 封裝： | ROHS COMPLIANT, NI-860C3, CASE 375G-04, 4 PIN |
| 文件頁數(shù)： | 6/12頁 |
| 文件大?。?/td> | 403K |
| 代理商： | MRFE6P9220HR3 |
MRFE6P9220HR3
3
Freescale Semiconductor
RF Product Device Data
Table 4. Electrical Characteristics (TC = 25°C unless otherwise noted) (continued)
Characteristic
Symbol
Min
Typ
Max
Unit
Typical Performances (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 1600 mA, 850-910 MHz Bandwidth
Pout @ 1 dB Compression Point, CW
P1dB
—
220
—
W
IMD Symmetry @ 220 W PEP, Pout where IMD Third Order
Intermodulation
` 30 dBc
(Delta IMD Third Order Intermodulation between Upper and Lower
Sidebands > 2 dB)
IMDsym
—
10
—
MHz
VBW Resonance Point
(IMD Third Order Intermodulation Inflection Point)
VBWres
—
35
—
MHz
Gain Flatness in 60 MHz Bandwidth @ Pout = 47 W Avg.
GF
—
1.1
—
dB
Average Deviation from Linear Phase in 60 MHz Bandwidth
@ Pout = 220 W CW
Φ
—
3.1
—
°
Average Group Delay @ Pout = 220 W CW, f = 880 MHz
Delay
—
4.6
—
ns
Part-to-Part Insertion Phase Variation @ Pout = 220 W CW,
f = 880 MHz, Six Sigma Window
ΔΦ
—
11
—
°
Gain Variation over Temperature
(-30°C to +85°C)
ΔG
—
0.012
—
dB/°C
Output Power Variation over Temperature
(-30°C to +85°C)
ΔP1dB
—
0.005
—
dBm/°C
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| MRFE6P9220HR5 | 功能描述:射頻MOSFET電源晶體管 HV6E 900MHZ 200W NI860ML RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
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