參數(shù)資料
型號(hào)： MRFE6P3300HR3
廠商： FREESCALE SEMICONDUCTOR INC
元件分類(lèi)： 功率晶體管
英文描述： 2 CHANNEL, UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET
封裝： ROHS COMPLIANT, NI-860C3, CASE 375G-04, 4 PIN
文件頁(yè)數(shù)： 9/12頁(yè)
文件大小： 445K
代理商： MRFE6P3300HR3
6
RF Device Data
Freescale Semiconductor
MRFE6P3300HR3
TYPICAL NARROWBAND CHARACTERISTICS
Figure 7. Intermodulation Distortion Products
versus Output Power
-70
-1 0
10
7th Order
Pout, OUTPUT POWER (WATTS) PEP
3rd Order
-2 0
-3 0
-4 0
-5 0
100
600
IMD,
INTERMODULA
TION
DIST
OR
TION
(dBc)
-6 0
5th Order
1
Figure 8. Intermodulation Distortion Products
versus Tone Spacing
-70
-1 0
1
TWO-T ONE SPACING (MHz)
VDD = 32 Vdc, Pout = 150 W (PEP), IDQ = 1600 mA
Two-Tone Measurements
(f1 + f2)/2 = Center Frequency of 860 MHz
-2 0
-3 0
-4 0
-5 0
10
80
IMD,
INTERMODULA
TION
DIST
OR
TION
(dBc)
Figure 9. Pulsed CW Output Power versus
Input Power
42
63
34
Pin, INPUT POWER (dBm)
61
59
57
53
36
38
40
Actual
Ideal
32
P
out
,OUTPUT
POWER
(dBm)
55
60
58
56
54
33
35
37
39
41
62
P1dB = 55.15 dBm
(327.9 W)
P3dB = 55.9 dBm
(388.37 W)
P6dB = 56.28 dBm
(424.38 W)
ACPR,
ADJACENT
CHANNEL
POWER
RA
TIO
(dBc)
Figure 10. Single-Carrier DVBT OFDM ACPR, Power
Gain and Drain Efficiency versus Output Power
15
-70
Pout, OUTPUT POWER (WATTS) AVG.
45
-25
30
20
-30
-35
-50
10
-45
η
D
,DRAIN
EFFICIENCY
(%),
G
ps
,POWER
GAIN
(dB)
Gps
ACP-U
VDD = 32 Vdc, IDQ = 1600 mA, f = 860 MHz
8K Mode OFDM, 64 QAM Data Carrier
Modulation, 5 Symbols
-30
_C
40
1
200
35
25
-40
85
_C
TC = -30_C
25
_C
ηD
VDD = 32 Vdc, IDQ = 1600 mA
f1 = 857 MHz, f2 = 863 MHz
Two-Tone Measurements, 6 MHz Tone Spacing
-6 0
IM3-L
IM3-U
IM5-L
IM5-U
IM7-U
IM7-L
VDD = 32 Vdc, IDQ = 1600 mA
Pulsed CW, 12
μsec(on), 1% Duty Cycle
f = 860 MHz
10
5
0
-65
-60
-55
100
ACP-L
-30
_C
25
_C
85
_C
25
_C
85
_C
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MRFE6P3300HR3_09 制造商:FREESCALE 制造商全稱(chēng):Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET
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MRFE6S8046GNR1 功能描述:射頻MOSFET電源晶體管 HV6E 45W GSM RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray
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