參數(shù)資料
型號: MRFE6P3300HR3
廠商: FREESCALE SEMICONDUCTOR INC
元件分類: 功率晶體管
英文描述: 2 CHANNEL, UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET
封裝: ROHS COMPLIANT, NI-860C3, CASE 375G-04, 4 PIN
文件頁數(shù): 12/12頁
文件大小: 445K
代理商: MRFE6P3300HR3
MRFE6P3300HR3
9
RF Device Data
Freescale Semiconductor
f
MHz
Zsource
Ω
Zload
Ω
830
845
860
4.52 - j6.73
3.89 - j5.81
4.22 - j6.38
4.89 - j1.35
5.06 - j1.01
5.18 - j0.58
VDD = 32 Vdc, IDQ = 1600 mA, Pout = 270 W PEP
Zsource = Test circuit impedance as measured from
gate to gate, balanced configuration.
Zload
= Test circuit impedance as measured
from drain to drain, balanced configuration.
Z
source
Z
load
Input
Matching
Network
Device
Under
Test
Output
Matching
Network
-
-+
+
Figure 16. 820-900 MHz Narrowband Series Equivalent Source and Load Impedance
Zo = 10 Ω
f = 890 MHz
f = 830 MHz
Zload
Zsource
875
890
3.39 - j4.32
3.54 - j5.10
5.27 - j0.11
5.36 + j0.43
f = 830 MHz
f = 890 MHz
相關(guān)PDF資料
PDF描述
MRFE6P3300HR5 2 CHANNEL, UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET
MRFE6P9220HR3 2 CHANNEL, UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET
MRFE6S8046NR1 UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET, TO-270
MRFE6S8046GNR1 UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET, TO-270BB
MRFE6S9045NR1 UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET, TO-270
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
MRFE6P3300HR3_09 制造商:FREESCALE 制造商全稱:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET
MRFE6P3300HR5 功能描述:射頻MOSFET電源晶體管 HV6 900MHZ 300W NI860ML RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray
MRFE6P9220HR3 功能描述:射頻MOSFET電源晶體管 HV6E 900MHZ 200W NI860ML RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray
MRFE6P9220HR5 功能描述:射頻MOSFET電源晶體管 HV6E 900MHZ 200W NI860ML RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray
MRFE6S8046GNR1 功能描述:射頻MOSFET電源晶體管 HV6E 45W GSM RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray